Fabrication of nano-patterned sapphire substrates and their application to the improvement of the performance of GaN-based LEDs
文献类型：期刊论文
| 作者 | Gao, HY ; Yan, FW ; Zhang, Y ; Li, JM ; Zeng, YP ; Wang, GH |
| 刊名 | journal of physics d-applied physics
 |
| 出版日期 | 2008 |
| 卷号 | 41期号:11页码:art. no. 115106 |
| 关键词 | LIGHT-EMITTING-DIODES EPITAXIAL LATERAL OVERGROWTH EFFICIENCY |
| ISSN号 | 0022-3727 |
| 通讯作者 | gao, hy, chinese acad sci, inst semicond, semicond lighting technol res & dev ctr, beijing 100083, peoples r china. 电子邮箱地址: hygao@semi.ac.cn |
| 中文摘要 | nano-patterned sapphire substrates (npsss) were fabricated by a chemical wet etching technology using nano-sized sio2 as masks. the npss was applied to improve the performance of gan-based light emitting diodes (leds). gan-based leds on npsss were grown by metal organic chemical vapour deposition. the characteristics of leds grown on npsss and conventional planar sapphire substrates were studied. the light output powers of the leds fabricated on npsss were considerably enhanced compared with that of the conventional leds grown on planar sapphire substrates. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/6660]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Gao, HY,Yan, FW,Zhang, Y,et al. Fabrication of nano-patterned sapphire substrates and their application to the improvement of the performance of GaN-based LEDs[J]. journal of physics d-applied physics,2008,41(11):art. no. 115106. |
| APA | Gao, HY,Yan, FW,Zhang, Y,Li, JM,Zeng, YP,&Wang, GH.(2008).Fabrication of nano-patterned sapphire substrates and their application to the improvement of the performance of GaN-based LEDs.journal of physics d-applied physics,41(11),art. no. 115106. |
| MLA | Gao, HY,et al."Fabrication of nano-patterned sapphire substrates and their application to the improvement of the performance of GaN-based LEDs".journal of physics d-applied physics 41.11(2008):art. no. 115106. |
入库方式： OAI收割
来源：半导体研究所
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