Long-wavelength light emission from self-assembled heterojunction quantum dots
文献类型：期刊论文
| 作者 | Zhou, ZQ ; Xu, YQ ; Hao, RT ; Tang, B ; Ren, ZW ; Niu, ZC |
| 刊名 | journal of applied physics
 |
| 出版日期 | 2008 |
| 卷号 | 103期号:9页码:art. no. 094315 |
| 关键词 | MU-M GAAS GROWTH EPITAXY |
| ISSN号 | 0021-8979 |
| 通讯作者 | xu, yq, chinese acad sci, inst semicond, state key lab superlattices & microstruct, pob 912, beijing 100083, peoples r china. 电子邮箱地址: yingqxu@semi.ac.cn |
| 中文摘要 | the authors report the optical characteristics of gasb/inas/gaas self-assembled heterojunction quantum dots (qds). with increasing gasb deposition, the room temperature emission wavelength can be extended to 1.56 mu m. the photoluminescence mechanism is considered to be a type-ii transition with electrons confined in inas and holes in gasb.(c) 2008 american institute of physics. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/6672]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhou, ZQ,Xu, YQ,Hao, RT,et al. Long-wavelength light emission from self-assembled heterojunction quantum dots[J]. journal of applied physics,2008,103(9):art. no. 094315. |
| APA | Zhou, ZQ,Xu, YQ,Hao, RT,Tang, B,Ren, ZW,&Niu, ZC.(2008).Long-wavelength light emission from self-assembled heterojunction quantum dots.journal of applied physics,103(9),art. no. 094315. |
| MLA | Zhou, ZQ,et al."Long-wavelength light emission from self-assembled heterojunction quantum dots".journal of applied physics 103.9(2008):art. no. 094315. |
入库方式： OAI收割
来源：半导体研究所
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