Controllable electron g-factors in HgMnTe quantum spheres
文献类型：期刊论文
| 作者 | Zhu, YH ; Xia, JB |
| 刊名 | epl
 |
| 出版日期 | 2008 |
| 卷号 | 82期号:3页码:art. no. 37004 |
| 关键词 | DILUTED MAGNETIC SEMICONDUCTORS SPIN HG1-XMNXTE MAGNETOABSORPTION NANOCRYSTALS TEMPERATURE CD1-XMNXTE EXCHANGE DOTS |
| ISSN号 | 0295-5075 |
| 通讯作者 | zhu, yh, chinese acad sci, inst semicond, natl lab superlattices & microstruct, pob 912, beijing 100083, peoples r china. 电子邮箱地址: zhuyh@semi.ac.cn |
| 中文摘要 | the electronic structure and lande electron g-factors of manganese-doped hgte quantum spheres are investigated, in the framework of the eight-band effective-mass model and the mean-field approximation. it is found that the electronic structure evolves continuously from the zero-gap configuration to an open-gap configuration with decreasing radius. the size dependence of electron g-factors is calculated with different mn-doped effective concentration, magnetic field, and temperature values, respectively. it is found that the variations of electron g-factors are quite different for small and large quantum spheres, due to the strong exchange-induced interaction and spin-orbit coupling in the narrow-gap dms nanocrystals. the electron g-factors are zero at a critical point of spherical radius r-c; however, by modulating the nanocrystal size their absolute values can be turned to be even 400 times larger than those in undoped cases. copyright (c) epla, 2008. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/6698]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhu, YH,Xia, JB. Controllable electron g-factors in HgMnTe quantum spheres[J]. epl,2008,82(3):art. no. 37004. |
| APA | Zhu, YH,&Xia, JB.(2008).Controllable electron g-factors in HgMnTe quantum spheres.epl,82(3),art. no. 37004. |
| MLA | Zhu, YH,et al."Controllable electron g-factors in HgMnTe quantum spheres".epl 82.3(2008):art. no. 37004. |
入库方式： OAI收割
来源：半导体研究所
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