Interaction between the intrinsic second- and third-order optical fields in an Al0.53Ga0.47N/GaN heterostructure
文献类型：期刊论文
| 作者 | Chen P
|
| 刊名 | applied physics letters
 |
| 出版日期 | 2008 |
| 卷号 | 92期号:16页码:art. no. 161112 |
| 关键词 | MACH-ZEHNDER INTERFEROMETER |
| ISSN号 | 0003-6951 |
| 通讯作者 | chen, p, chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china. 电子邮箱地址: pchen@semi.ac.cn |
| 中文摘要 | we present an experimental demonstration of the interaction between the intrinsic second- and third-order optical fields in an al0.53ga0.47n/gan heterostructure. the sample was deposited by metal-organic chemical vapor deposition on (0001) sapphire. the nonlinear optical coefficients of the sample, which were measured with a mach-zehnder interferometer system, quadratically increase with the applied modulating voltage, indicating the existence of the third-order optical field. the third-order signal was then detected by the z-scan method and we calculated the built-in dc field on the algan/gan interface to confirm the strong interaction between the intrinsic second- and third-order optical fields. (c) 2008 american institute of physics. |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/6712]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Chen P. Interaction between the intrinsic second- and third-order optical fields in an Al0.53Ga0.47N/GaN heterostructure[J]. applied physics letters,2008,92(16):art. no. 161112. |
| APA | Chen P.(2008).Interaction between the intrinsic second- and third-order optical fields in an Al0.53Ga0.47N/GaN heterostructure.applied physics letters,92(16),art. no. 161112. |
| MLA | Chen P."Interaction between the intrinsic second- and third-order optical fields in an Al0.53Ga0.47N/GaN heterostructure".applied physics letters 92.16(2008):art. no. 161112. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。