Magnetic coupling properties of mn-doped ZnO nanowires: First-principles calculations
文献类型：期刊论文
| 作者 | Shi, H ; Duan, Y |
| 刊名 | journal of applied physics
 |
| 出版日期 | 2008 |
| 卷号 | 103期号:7页码:art. no. 073903 |
| 关键词 | HIGH CURIE-TEMPERATURE SPINODAL-DECOMPOSITION ROOM-TEMPERATURE 1ST PRINCIPLES THIN-FILMS SEMICONDUCTORS FERROMAGNETISM STABILIZATION GROWTH PHASE |
| ISSN号 | 0021-8979 |
| 通讯作者 | shi, h, chinese acad sci, inst semicond, state key lab superlattices & microstruct, pob 912, beijing 100083, peoples r china. 电子邮箱地址: hlshi@semi.ac.cn |
| 中文摘要 | based on the density functional theory, we study the magnetic coupling properties of mn-doped zno nanowires. for the nanowires with passivated surfaces, the antiferromagnetic state is found and the mn atoms have a clustering tendency. when the distance between two mn atoms is large, the system energetically favors the paramagnetic or spin-glass state. for the nanowires with unpassivated surfaces, the ferromagnetic (fm) coupling states appear between the two nearest mn atoms, and the zinc vacancies can further stabilize the fm states between them. the electrons with enough concentration possibly mediate the fm coupling due to the negative exchange splitting of conduction band minimum induced by the s-d coupling, which could be useful in nanomaterial design for spintronics. (c) 2008 american institute of physics. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/6716]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Shi, H,Duan, Y. Magnetic coupling properties of mn-doped ZnO nanowires: First-principles calculations[J]. journal of applied physics,2008,103(7):art. no. 073903. |
| APA | Shi, H,&Duan, Y.(2008).Magnetic coupling properties of mn-doped ZnO nanowires: First-principles calculations.journal of applied physics,103(7),art. no. 073903. |
| MLA | Shi, H,et al."Magnetic coupling properties of mn-doped ZnO nanowires: First-principles calculations".journal of applied physics 103.7(2008):art. no. 073903. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。