Tunneling magnetoresistance in CoFeB/GaAs/(Ga,Mn)As hybrid magnetic tunnel junctions
文献类型：期刊论文
| 作者 | Du, GX ; Han, XF ; Deng, JJ ; Wang, WZ ; Zhao, JH |
| 刊名 | journal of applied physics
 |
| 出版日期 | 2008 |
| 卷号 | 103期号:7页码:art. no. 07d105 |
| 关键词 | HETEROSTRUCTURES SEMICONDUCTORS (GA MN)AS |
| ISSN号 | 0021-8979 |
| 通讯作者 | han, xf, chinese acad sci, inst phys, beijing natl lab condensed matter phys, state key lab magnetism, beijing 100080, peoples r china. 电子邮箱地址: xfhan@aphy.iphy.ac.cn ; jhzhao@red.semi.ac.cn |
| 中文摘要 | we reported the all electronic demonstration of spin injection and detection in the trilayers with hybrid structure of cofeb/gaas/(ga,mn)as (metal/insulator semiconductor) by probing the magnetoresistance at low temperature from 1.8 to 30 k. tunneling magnetoresistance (tmr) ratios of 3.8%, 4.7%, 2.9%, and 1.4% at 1.8, 10, 20, and 30 k, respectively, were observed. bias dependence of both the junction resistance and tmr ratio was studied systematically. v-half at which tmr drops to half of its maximum is 6.3 mv, being much smaller compared to that observed in (ga,mn)as/znse/fe and (ga,mn)as/alas/mnas hybrid structures, indicating lower fermi energy of (ga,mn)as. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/6718]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Du, GX,Han, XF,Deng, JJ,et al. Tunneling magnetoresistance in CoFeB/GaAs/(Ga,Mn)As hybrid magnetic tunnel junctions[J]. journal of applied physics,2008,103(7):art. no. 07d105. |
| APA | Du, GX,Han, XF,Deng, JJ,Wang, WZ,&Zhao, JH.(2008).Tunneling magnetoresistance in CoFeB/GaAs/(Ga,Mn)As hybrid magnetic tunnel junctions.journal of applied physics,103(7),art. no. 07d105. |
| MLA | Du, GX,et al."Tunneling magnetoresistance in CoFeB/GaAs/(Ga,Mn)As hybrid magnetic tunnel junctions".journal of applied physics 103.7(2008):art. no. 07d105. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。