Design and fabrication of polarization-independent micro-ring resonators
文献类型：期刊论文
| 作者 | Geng, MM ; Jia, LX ; Zhang, L ; Liu, YL ; Yang, L ; Li, F |
| 刊名 | chinese physics letters
 |
| 出版日期 | 2008 |
| 卷号 | 25期号:4页码:1333-1335 |
| 关键词 | VARIABLE OPTICAL ATTENUATOR |
| ISSN号 | 0256-307x |
| 通讯作者 | geng, mm, chinese acad sci, inst semicond, lab optoelect syst, pob 912, beijing 100083, peoples r china. 电子邮箱地址: eric@semi.ac.cn |
| 中文摘要 | origin of polarization sensitivity of photonic wire waveguides (pwws) is analysed and the effective refractive indices of two different polarization states are calculated by the three-dimensional full-vector beam propagation method. we find that pwws are polarization insensitive if the distribution of its refractive index is uniform and the cross section is square. an mrr based on such a polarization-insensitive pww is fabricated on an 8-inch silicon-on-insulator wafer using 248-nm deep ultraviolet lithography and reactive ion etching. the quasi-te mode is resonant at 1542.25 nm and 1558.90 nm, and the quasi-tm mode is resonant at 1542.12 nm and 1558.94 nm. the corresponding polarization shift is 0.13 nm at the shorter wavelength and 0.04 nm at the longer wavelength. thus the fabricated device is polarization independent. the extinction ratio is larger than 10 db. the 3 db bandwidth is about 2.5 nm and the qvalue is about 620 at 1558.90 nm. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/6722]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Geng, MM,Jia, LX,Zhang, L,et al. Design and fabrication of polarization-independent micro-ring resonators[J]. chinese physics letters,2008,25(4):1333-1335. |
| APA | Geng, MM,Jia, LX,Zhang, L,Liu, YL,Yang, L,&Li, F.(2008).Design and fabrication of polarization-independent micro-ring resonators.chinese physics letters,25(4),1333-1335. |
| MLA | Geng, MM,et al."Design and fabrication of polarization-independent micro-ring resonators".chinese physics letters 25.4(2008):1333-1335. |
入库方式： OAI收割
来源：半导体研究所
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