High performance 1689-nm quantum well diode lasers
文献类型：期刊论文
| 作者 | Duan, YP ; Lin, T ; Wang, CL ; Chong, F ; Ma, XY |
| 刊名 | chinese optics letters
 |
| 出版日期 | 2007 |
| 卷号 | 5期号:10页码:585-587 |
| ISSN号 | 1671-7694 |
| 关键词 | MOLECULAR-BEAM EPITAXY MU-M ROOM-TEMPERATURE HIGH-POWER OPERATION CW |
| 通讯作者 | duan, yp, nw univ xian, dept phys, xian 710069, peoples r china. 电子邮箱地址: yupengduan@sina.com |
| 中文摘要 | 1689-nm diode lasers used in medical apparatus have been fabricated and characterized. the lasers had pnpn inp current confinement structure, and the active region consisted of 5 pairs of ingaas quantum wells and ingaasp barriers. stripe width and cavity length of the laser were 1.8 and 300 pm, respectively. after being cavity coated. and transistor outline (to) packaged, the lasers showed high performance in practice. the threshold current was about 13 +/- 4 ma, the operation current and the lasing spectrum were about 58 6 ma and 1689 +/- 6 nm at 6-mw output power, respectively. moreover, the maximum output power of the lasers was above 20 mw. |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/6724]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Duan, YP,Lin, T,Wang, CL,et al. High performance 1689-nm quantum well diode lasers[J]. chinese optics letters,2007,5(10):585-587. |
| APA | Duan, YP,Lin, T,Wang, CL,Chong, F,&Ma, XY.(2007).High performance 1689-nm quantum well diode lasers.chinese optics letters,5(10),585-587. |
| MLA | Duan, YP,et al."High performance 1689-nm quantum well diode lasers".chinese optics letters 5.10(2007):585-587. |
入库方式： OAI收割
来源：半导体研究所
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