中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Anomalous Rashba spin-orbit interaction in InAs/GaSb quantum wells

文献类型:期刊论文

作者Li J
刊名applied physics letters
出版日期2008
卷号92期号:15页码:art. no. 152107
关键词BAND-STRUCTURE
ISSN号0003-6951
通讯作者chang, k, chinese acad sci, inst semicond, sklsm, pob 912, beijing 100083, peoples r china. 电子邮箱地址: kchang@red.semi.ac.cn
中文摘要we theoretically investigate the rashba spin-orbit interaction in inas/gasb quantum wells (qws). we find that the rashba spin-splitting (rss) sensitively depends on the thickness of the inas layer. the rss exhibits nonlinear behavior for narrow inas/gasb qws and the oscillating feature for wide inas/gasb qws. the nonlinear and oscillating behaviors arise from the weakened and enhanced interband coupling. the rss also show asymmetric features respect to the direction of the external electric field. (c) 2008 american institute of physics.
学科主题半导体物理
收录类别SCI
语种英语
公开日期2010-03-08
源URL[http://ir.semi.ac.cn/handle/172111/6730]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
推荐引用方式
GB/T 7714
Li J. Anomalous Rashba spin-orbit interaction in InAs/GaSb quantum wells[J]. applied physics letters,2008,92(15):art. no. 152107.
APA Li J.(2008).Anomalous Rashba spin-orbit interaction in InAs/GaSb quantum wells.applied physics letters,92(15),art. no. 152107.
MLA Li J."Anomalous Rashba spin-orbit interaction in InAs/GaSb quantum wells".applied physics letters 92.15(2008):art. no. 152107.

入库方式: OAI收割

来源:半导体研究所

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