Preliminary design of a tensile-strained p-type Si/SiGe quantum well infrared photodetector
文献类型：期刊论文
| 作者 | Jiang LG ; Kai LH ; Cheng L ; Yan CS ; Zhong YJ |
| 刊名 | semiconductor science and technology
 |
| 出版日期 | 2008 |
| 卷号 | 23期号:3页码:art. no. 035011 |
| 关键词 | INTERSUBBAND ABSORPTION |
| ISSN号 | 0268-1242 |
| 通讯作者 | jiang, lg, xiamen univ, dept phys, semicond photon res ctr, xiamen 361005, peoples r china. |
| 中文摘要 | considering tensile-strained p-type si/si1-ygey quantum wells grown on a relaxed si1-xgex ( 0 0 1) virtual substrate ( y < x), the hole subband structure and the effective masses of the first bound hole state in the quantum wells are calculated by using the 6 x 6 k center dot p method. designs for tensile-strained p-type quantum well infrared photodetectors ( qwips) based on the bound-to-quasi-bound transitions are discussed, which are expected to retain the ability of coupling normally incident infrared radiation without any grating couplers, have lower dark current than n-type qwips and also have a larger absorption coefficient and better transport characteristics than normal unstrained or compressive-strained p-type qwips. |
| 学科主题 | 半导体器件 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/6754]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Jiang LG,Kai LH,Cheng L,et al. Preliminary design of a tensile-strained p-type Si/SiGe quantum well infrared photodetector[J]. semiconductor science and technology,2008,23(3):art. no. 035011. |
| APA | Jiang LG,Kai LH,Cheng L,Yan CS,&Zhong YJ.(2008).Preliminary design of a tensile-strained p-type Si/SiGe quantum well infrared photodetector.semiconductor science and technology,23(3),art. no. 035011. |
| MLA | Jiang LG,et al."Preliminary design of a tensile-strained p-type Si/SiGe quantum well infrared photodetector".semiconductor science and technology 23.3(2008):art. no. 035011. |
入库方式： OAI收割
来源：半导体研究所
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