High rate deposition of microcrystalline silicon films by high-pressure radio frequency plasma enhanced chemical vapor deposition (PECVD)
文献类型：期刊论文
| 作者 | Zhou, BQ ; Zhu, MF ; Liu, FZ ; Liu, JL ; Zhou, YQ ; Li, GH ; Ding, K |
| 刊名 | science in china series e-technological sciences
 |
| 出版日期 | 2008 |
| 卷号 | 51期号:4页码:371-377 |
| 关键词 | radio-frequency plasma enhanced chemical vapor deposition (rf-PECVD) microcrystalline silicon film high rate deposition |
| ISSN号 | 1006-9321 |
| 通讯作者 | zhou, bq, inner mongolia normal univ, coll phys & elect informat, hohhot 010022, peoples r china. 电子邮箱地址: zhoubq@imnu.edu.cn |
| 中文摘要 | hydrogenated microcrystalline silicon (mu c-si:h) thin films were prepared by high-pressure radio-frequency (13.56 mhz) plasma enhanced chemical vapor deposition (rf-pecvd) with a screened plasma. the deposition rate and crystallinity varying with the deposition pressure, rf power, hydrogen dilution ratio and electrodes distance were systematically studied. by optimizing the deposition parameters the device quality mu c-si:h films have been achieved with a high deposition rate of 7.8 angstrom/s at a high pressure. the v-oc of 560 mv and the ff of 0.70 have been achieved for a single-junction mu c-si:h p-i-n solar cell at a deposition rate of 7.8 angstrom/s. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/6756]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhou, BQ,Zhu, MF,Liu, FZ,et al. High rate deposition of microcrystalline silicon films by high-pressure radio frequency plasma enhanced chemical vapor deposition (PECVD)[J]. science in china series e-technological sciences,2008,51(4):371-377. |
| APA | Zhou, BQ.,Zhu, MF.,Liu, FZ.,Liu, JL.,Zhou, YQ.,...&Ding, K.(2008).High rate deposition of microcrystalline silicon films by high-pressure radio frequency plasma enhanced chemical vapor deposition (PECVD).science in china series e-technological sciences,51(4),371-377. |
| MLA | Zhou, BQ,et al."High rate deposition of microcrystalline silicon films by high-pressure radio frequency plasma enhanced chemical vapor deposition (PECVD)".science in china series e-technological sciences 51.4(2008):371-377. |
入库方式： OAI收割
来源：半导体研究所
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