Mg acceptor energy levels in AlxInyGa1-x-yN quaternary alloys: An approach to overcome the p-type doping bottleneck in nitrides
文献类型：期刊论文
| 作者 | Wang, F ; Li, JB ; Li, SS ; Xia, JB ; Wei, SH |
| 刊名 | physical review b
 |
| 出版日期 | 2008 |
| 卷号 | 77期号:11页码:art. no. 113202 |
| 关键词 | SPECIAL QUASIRANDOM STRUCTURES AUGMENTED-WAVE METHOD BASIS-SET SEMICONDUCTORS LATTICE |
| ISSN号 | 1098-0121 |
| 通讯作者 | wang, f, chinese acad sci, inst semicond, state key lab superlattices & microstruct, pob 912, beijing 100083, peoples r china. 电子邮箱地址: jbli@semi.ac.cn |
| 中文摘要 | the mg-ga acceptor energy levels in gan and random al8in4ga20n32 quaternary alloys are calculated using the first-principles band-structure method. we show that due to wave function localization, the mgga acceptor energy level in the alloy is significantly lower than that of gan, although the two materials have nearly identical band gaps. our study demonstrates that forming alxinyga1-x-yn quaternary alloys can be a useful approach to lower acceptor ionization energy in the nitrides and thus provides an approach to overcome the p-type doping difficulty in the nitride system. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/6758]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Wang, F,Li, JB,Li, SS,et al. Mg acceptor energy levels in AlxInyGa1-x-yN quaternary alloys: An approach to overcome the p-type doping bottleneck in nitrides[J]. physical review b,2008,77(11):art. no. 113202. |
| APA | Wang, F,Li, JB,Li, SS,Xia, JB,&Wei, SH.(2008).Mg acceptor energy levels in AlxInyGa1-x-yN quaternary alloys: An approach to overcome the p-type doping bottleneck in nitrides.physical review b,77(11),art. no. 113202. |
| MLA | Wang, F,et al."Mg acceptor energy levels in AlxInyGa1-x-yN quaternary alloys: An approach to overcome the p-type doping bottleneck in nitrides".physical review b 77.11(2008):art. no. 113202. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。