中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Origin of the doping bottleneck in semiconductor quantum dots: A first-principles study

文献类型:期刊论文

作者Li, JB ; Wei, SH ; Li, SS ; Xia, JB
刊名physical review b
出版日期2008
卷号77期号:11页码:art. no. 113304
关键词ZNSE NANOCRYSTAL EMITTERS CDSE NANOCRYSTALS EFFICIENT CHEMISTRY
ISSN号1098-0121
通讯作者li, jb, chinese acad sci, inst semicond, state key lab superlattices & microstruct, pob 912, beijing 100083, peoples r china. 电子邮箱地址: jbli@semi.ac.cn
中文摘要doping difficulty in semiconductor nanocrystals has been observed and its origin is currently under debate. it is not clear whether this phenomenon is energetic or depends on the growth kinetics. using first-principles method, we show that the transition energies and defect formation energies of the donor and acceptor defects always increase as the quantum dot sizes decrease. however, for isovalent impurities, the changes of the defect formation energies are rather small. the origin of the calculated trends is explained using simple band-energy-level models.
学科主题半导体物理
收录类别SCI
语种英语
公开日期2010-03-08
源URL[http://ir.semi.ac.cn/handle/172111/6760]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
推荐引用方式
GB/T 7714
Li, JB,Wei, SH,Li, SS,et al. Origin of the doping bottleneck in semiconductor quantum dots: A first-principles study[J]. physical review b,2008,77(11):art. no. 113304.
APA Li, JB,Wei, SH,Li, SS,&Xia, JB.(2008).Origin of the doping bottleneck in semiconductor quantum dots: A first-principles study.physical review b,77(11),art. no. 113304.
MLA Li, JB,et al."Origin of the doping bottleneck in semiconductor quantum dots: A first-principles study".physical review b 77.11(2008):art. no. 113304.

入库方式: OAI收割

来源:半导体研究所

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