Evolution of structural defects in SiOx films fabricated by electron cyclotron resonance plasma chemical vapour deposition upon annealing treatment
文献类型：期刊论文
| 作者 | Hao, XP ; Wang, BY ; Yu, RS ; Wei, L ; Wang, H ; Zhao, DG ; Hao, WC |
| 刊名 | chinese physics letters
 |
| 出版日期 | 2008 |
| 卷号 | 25期号:3页码:1034-1037 |
| 关键词 | SILICON-OXIDE FILMS POSITRON-ANNIHILATION POROUS SILICON THIN-FILMS PHOTOLUMINESCENCE LAYERS BEAM |
| ISSN号 | 0256-307x |
| 通讯作者 | wei, l, chinese acad sci, inst high energy phys, key lab nucl anal tech, beijing 100049, peoples r china. 电子邮箱地址: weil@ihep.ac.cn |
| 中文摘要 | we study the structural defects in the siox film prepared by electron cyclotron resonance plasma chemical vapour deposition and annealing recovery evolution. the photoluminescence property is observed in the as-deposited and annealed samples. [-sio3](2-) defects are the luminescence centres of the ultraviolet photoluminescence (pl) from the fourier transform infrared spectroscopy and pl measurements. [-sio3](2-) is observed by positron annihilation spectroscopy, and this defect can make the s parameters increase. after 1000 degrees c annealing, [-sio3](2-) defects still exist in the films. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/6784]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Hao, XP,Wang, BY,Yu, RS,et al. Evolution of structural defects in SiOx films fabricated by electron cyclotron resonance plasma chemical vapour deposition upon annealing treatment[J]. chinese physics letters,2008,25(3):1034-1037. |
| APA | Hao, XP.,Wang, BY.,Yu, RS.,Wei, L.,Wang, H.,...&Hao, WC.(2008).Evolution of structural defects in SiOx films fabricated by electron cyclotron resonance plasma chemical vapour deposition upon annealing treatment.chinese physics letters,25(3),1034-1037. |
| MLA | Hao, XP,et al."Evolution of structural defects in SiOx films fabricated by electron cyclotron resonance plasma chemical vapour deposition upon annealing treatment".chinese physics letters 25.3(2008):1034-1037. |
入库方式： OAI收割
来源：半导体研究所
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