A ministop band in a single-defect photonic crystal waveguide based on silicon on insulator
文献类型：期刊论文
| 作者 | Tang, HX ; Zuo, YH ; Yu, JZ ; Wang, QM |
| 刊名 | chinese physics b
 |
| 出版日期 | 2008 |
| 卷号 | 17期号:1页码:228-231 |
| 关键词 | photonic bandgap photonic crystal waveguide silicon-on-insulator ministop band |
| ISSN号 | 1674-1056 |
| 通讯作者 | tang, hx, chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china. 电子邮箱地址: thx@mail.semi.ac.cn |
| 中文摘要 | this paper reports that a two-dimensional single-defect photonic crystal waveguide in the f-k direction with triangular lattice on a silicon-on-insulator substrate is fabricated by the combination of electron beam lithography and inductively coupled plasma etching. a ministop band (msb) is observed by the measurement of transmission characteristics. it results from the coupling between the two modes with the same symmetry, which is analysed from the stimulated band diagram by the effective index and the two-dimensional plane wave expansion methods. the parameter working on the msb is the ratio of the radius of air holes to the lattice constant, r/a. it is obtained that the critical r/a value determining the occurrence or disappearance of msb is 0.36. when r/a is larger than or equal to 0.36, the msb occurs. however, when r/a is smaller than 0.36, the msb disappears. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/6790]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Tang, HX,Zuo, YH,Yu, JZ,et al. A ministop band in a single-defect photonic crystal waveguide based on silicon on insulator[J]. chinese physics b,2008,17(1):228-231. |
| APA | Tang, HX,Zuo, YH,Yu, JZ,&Wang, QM.(2008).A ministop band in a single-defect photonic crystal waveguide based on silicon on insulator.chinese physics b,17(1),228-231. |
| MLA | Tang, HX,et al."A ministop band in a single-defect photonic crystal waveguide based on silicon on insulator".chinese physics b 17.1(2008):228-231. |
入库方式： OAI收割
来源：半导体研究所
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