High-density and narrow size-distribution InAs quantum dots formed by a modified two-step growth
文献类型：期刊论文
| 作者 | She-Song, H ; Zhi-Chuan, N ; Feng, Z ; Hai-Qiao, N ; Huan, Z ; Dong-Hai, W ; Zheng, S |
| 刊名 | chinese physics b
 |
| 出版日期 | 2008 |
| 卷号 | 17期号:1页码:323-327 |
| ISSN号 | 1674-1056 |
| 关键词 | molecular beam epitaxy quantum dots a modified two-step growth |
| 通讯作者 | she-song, h, chinese acad sci, inst semicond, state key lab superlattices & microstruct, beijing 100083, peoples r china. 电子邮箱地址: sshuang@red.semi.ac.cn |
| 中文摘要 | we develop a modified two-step method of growing high-density and narrow size-distribution inas/gaas quantum dots (qds) by molecular beam epitaxy. in the first step, high-density small inas qds are formed by optimizing the continuous deposition amount. in the second step, deposition is carried out with a long growth interruption for every 0.1 inas monolayer. atomic force microscope images show that the high-density (similar to 5.9x 10(10) cm-2) good size-uniformity inas qds are achieved. the strong intensity and narrow linewidth (27.7 mev) of the photoluminescence spectrum show that the qds grown in this two-step method have a good optical quality. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/6792]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | She-Song, H,Zhi-Chuan, N,Feng, Z,et al. High-density and narrow size-distribution InAs quantum dots formed by a modified two-step growth[J]. chinese physics b,2008,17(1):323-327. |
| APA | She-Song, H.,Zhi-Chuan, N.,Feng, Z.,Hai-Qiao, N.,Huan, Z.,...&Zheng, S.(2008).High-density and narrow size-distribution InAs quantum dots formed by a modified two-step growth.chinese physics b,17(1),323-327. |
| MLA | She-Song, H,et al."High-density and narrow size-distribution InAs quantum dots formed by a modified two-step growth".chinese physics b 17.1(2008):323-327. |
入库方式： OAI收割
来源：半导体研究所
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