Influence of V/III ratio on the structural and photoluminescence properties of In0.52AlAs/In0.53GaAs metamorphic high electron mobility transistor grown by molecular beam epitaxy
文献类型：期刊论文
| 作者 | Gao, HL ; Zeng, YP ; Wang, BQ ; Zhu, ZP ; Wang, ZG |
| 刊名 | chinese physics b
 |
| 出版日期 | 2008 |
| 卷号 | 17期号:3页码:1119-1123 |
| 关键词 | molecular beam epitaxy semiconducting III-V materials high electron mobility transistors |
| ISSN号 | 1674-1056 |
| 通讯作者 | gao, hl, chinese acad sci, inst semicond, novel mat lab, beijing 100083, peoples r china. 电子邮箱地址: hlgao@semi.ac.cn |
| 中文摘要 | a series of metamorphic high electron mobility transistors (mmhemts) with different v/iii flux ratios are grown on gaas (001) substrates by molecular beam epitaxy (xibe). the samples are analysed by using atomic force microscopy (afm), hall measurement, and low temperature photoluminescence (pl). the optimum v/iii ratio in a range from 15 to 60 for the growth of mmhemts is found to be around 40. at this ratio, the root mean square (rms) roughness of the material is only 2.02 nm; a room-temperature mobility and a sheet electron density are obtained to be 10610.0cm(2)/(v.s) and 3.26 x 10(12)cm(-2) respectively. these results are equivalent to those obtained for the same structure grown on inp substrate. there are two peaks in the pl spectrum of the structure, corresponding to two sub-energy levels of the in0.53ga0.47 as quantum well. it is found that the photoluminescence intensities of the two peaks vary with the v/iii ratio, for which the reasons are discussed. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/6794]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Gao, HL,Zeng, YP,Wang, BQ,et al. Influence of V/III ratio on the structural and photoluminescence properties of In0.52AlAs/In0.53GaAs metamorphic high electron mobility transistor grown by molecular beam epitaxy[J]. chinese physics b,2008,17(3):1119-1123. |
| APA | Gao, HL,Zeng, YP,Wang, BQ,Zhu, ZP,&Wang, ZG.(2008).Influence of V/III ratio on the structural and photoluminescence properties of In0.52AlAs/In0.53GaAs metamorphic high electron mobility transistor grown by molecular beam epitaxy.chinese physics b,17(3),1119-1123. |
| MLA | Gao, HL,et al."Influence of V/III ratio on the structural and photoluminescence properties of In0.52AlAs/In0.53GaAs metamorphic high electron mobility transistor grown by molecular beam epitaxy".chinese physics b 17.3(2008):1119-1123. |
入库方式： OAI收割
来源：半导体研究所
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