Annihilation of deep level defects in InP through high temperature annealing
文献类型：期刊论文
| 作者 | Zhao, YW ; Dong, ZY |
| 刊名 | journal of physics and chemistry of solids
 |
| 出版日期 | 2008 |
| 卷号 | 69期号:39847页码:551-554 |
| ISSN号 | 0022-3697 |
| 关键词 | defect |
| 通讯作者 | zhao, yw, chinese acad sci, inst semicond, pob 912, beijing 100083, peoples r china. 电子邮箱地址: zhaoyw@red.semi.ac.cn |
| 中文摘要 | deep level transient spectroscopy (dlts) and thermally stimulated current spectroscopy (tsc) have been used to investigate defects in semi-conducting and semi-insulating (si) inp after high temperature annealing, respectively. the results indicate that the annealing in iron phosphide ambient has an obvious suppression effect of deep defects, when compared with the annealing in phosphorus ambient. a defect annihilation phenomenon has also been observed in fe-doped si-inp materials after annealing. mechanism of defect formation and annihilation related to in-diffusion of iron and phosphorus is discussed. nature of the thermally induced defects has been discussed based on the results. (c) 2007 elsevier ltd. all rights reserved. |
| 学科主题 | 半导体化学 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/6808]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhao, YW,Dong, ZY. Annihilation of deep level defects in InP through high temperature annealing[J]. journal of physics and chemistry of solids,2008,69(39847):551-554. |
| APA | Zhao, YW,&Dong, ZY.(2008).Annihilation of deep level defects in InP through high temperature annealing.journal of physics and chemistry of solids,69(39847),551-554. |
| MLA | Zhao, YW,et al."Annihilation of deep level defects in InP through high temperature annealing".journal of physics and chemistry of solids 69.39847(2008):551-554. |
入库方式： OAI收割
来源：半导体研究所
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