Temperature dependence of effective g factor in diluted magnetic semiconductor (Ga,Mn)As
文献类型：期刊论文
| 作者 | Zhou, R ; Sun, BQ ; Ruan, XZ ; Luo, HH ; Ji, Y ; Wang, WZ ; Zhang, F ; Zhao, JH |
| 刊名 | journal of applied physics
 |
| 出版日期 | 2008 |
| 卷号 | 103期号:5页码:art. no. 053901 |
| ISSN号 | 0021-8979 |
| 关键词 | GAAS HETEROSTRUCTURES ALLOYS |
| 通讯作者 | zhou, r, chinese acad sci, inst semicond, sklsm, pob 912, beijing 100083, peoples r china. 电子邮箱地址: zhourong05@semi.ac.cn ; bqsun@red.semi.ac.cn |
| 中文摘要 | time resolved magneto-optic kerr rotation measurements of optically induced spin quantum beats are performed on heavily doped bulk (ga,mn)as diluted magnetic semiconductors (dms). an effective g-factor of about 0.2-0.3 over a wide range of temperature for both as-grown and annealed (ga,mn)as samples is obtained. a larger effective g-factor at lower temperature and an increase of the spin relaxation with increasing in-plane magnetic field are observed and attributed to the stronger p-d exchange interaction between holes and the localized magnetic ion spins, leading to a larger zeeman splitting and heavy-hole-light-hole mixing. an abnormal dip structure of the g-factor in the vicinity of the curie temperature suggests that the mean-field model is insufficient to describe the interactions and dynamics of spins in dms because it neglects the short-range spin correlation effect. (c) 2008 american institute of physics. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/6810]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhou, R,Sun, BQ,Ruan, XZ,et al. Temperature dependence of effective g factor in diluted magnetic semiconductor (Ga,Mn)As[J]. journal of applied physics,2008,103(5):art. no. 053901. |
| APA | Zhou, R.,Sun, BQ.,Ruan, XZ.,Luo, HH.,Ji, Y.,...&Zhao, JH.(2008).Temperature dependence of effective g factor in diluted magnetic semiconductor (Ga,Mn)As.journal of applied physics,103(5),art. no. 053901. |
| MLA | Zhou, R,et al."Temperature dependence of effective g factor in diluted magnetic semiconductor (Ga,Mn)As".journal of applied physics 103.5(2008):art. no. 053901. |
入库方式： OAI收割
来源：半导体研究所
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