Effect of indium-doped interlayer on the strain relief in GaN films grown on Si(111)
文献类型：期刊论文
| 作者 | Wu, JJ ; Zhao, LB ; Zhang, GY ; Liu, XL ; Zhu, QS ; Wang, ZG ; Jia, QJ ; Guo, LP ; Hu, TD |
| 刊名 | physica status solidi a-applications and materials science
 |
| 出版日期 | 2008 |
| 卷号 | 205期号:2页码:294-299 |
| 关键词 | CHEMICAL-VAPOR-DEPOSITION TEMPERATURE ALN INTERLAYERS PHASE EPITAXY OPTICAL-PROPERTIES SURFACTANT SUBSTRATE STRESS SI REDUCTION SAPPHIRE |
| ISSN号 | 1862-6300 |
| 通讯作者 | wu, jj, peking univ, sch phys, state key lab artificial microstruct & mesoscop p, res ctr wide gap semicond, beijing 100871, peoples r china. 电子邮箱地址: jiejunw@red.semi.ac.cn |
| 中文摘要 | crack-free gan films have been achieved by inserting an indoped low-temperature (lt) algan interlayer grown on silicon by metalorganic chemical vapor deposition. the relationship between lattice constants c and a obtained by x-ray diffraction analysis shows that indium doping interlayer can reduce the stress in gan layers. the stress in gan decreases with increasing trimethylindium (tmin) during interlayer growth. moreover, for a smaller tmin flow, the stress in gan decreases dramatically when in acts as a surfactant to improve the crystallinity of the algan interlayer, and for a larger tmin flow, the stress will increase again. the decreased stress leads to smoother surfaces and fewer cracks for gan layers by using an in-doped interlayer than by using an undoped interlayer. in doping has been found to enhance the lateral growth and reduce the growth rate of the c face. it can explain the strain relief and cracks reduction in gan films. (c) 2008 wiley-vch verlag gmbh & co. kgaa, weinheim. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/6822]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Wu, JJ,Zhao, LB,Zhang, GY,et al. Effect of indium-doped interlayer on the strain relief in GaN films grown on Si(111)[J]. physica status solidi a-applications and materials science,2008,205(2):294-299. |
| APA | Wu, JJ.,Zhao, LB.,Zhang, GY.,Liu, XL.,Zhu, QS.,...&Hu, TD.(2008).Effect of indium-doped interlayer on the strain relief in GaN films grown on Si(111).physica status solidi a-applications and materials science,205(2),294-299. |
| MLA | Wu, JJ,et al."Effect of indium-doped interlayer on the strain relief in GaN films grown on Si(111)".physica status solidi a-applications and materials science 205.2(2008):294-299. |
入库方式： OAI收割
来源：半导体研究所
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