中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Effect of indium-doped interlayer on the strain relief in GaN films grown on Si(111)

文献类型:期刊论文

作者Wu, JJ ; Zhao, LB ; Zhang, GY ; Liu, XL ; Zhu, QS ; Wang, ZG ; Jia, QJ ; Guo, LP ; Hu, TD
刊名physica status solidi a-applications and materials science
出版日期2008
卷号205期号:2页码:294-299
关键词CHEMICAL-VAPOR-DEPOSITION TEMPERATURE ALN INTERLAYERS PHASE EPITAXY OPTICAL-PROPERTIES SURFACTANT SUBSTRATE STRESS SI REDUCTION SAPPHIRE
ISSN号1862-6300
通讯作者wu, jj, peking univ, sch phys, state key lab artificial microstruct & mesoscop p, res ctr wide gap semicond, beijing 100871, peoples r china. 电子邮箱地址: jiejunw@red.semi.ac.cn
中文摘要crack-free gan films have been achieved by inserting an indoped low-temperature (lt) algan interlayer grown on silicon by metalorganic chemical vapor deposition. the relationship between lattice constants c and a obtained by x-ray diffraction analysis shows that indium doping interlayer can reduce the stress in gan layers. the stress in gan decreases with increasing trimethylindium (tmin) during interlayer growth. moreover, for a smaller tmin flow, the stress in gan decreases dramatically when in acts as a surfactant to improve the crystallinity of the algan interlayer, and for a larger tmin flow, the stress will increase again. the decreased stress leads to smoother surfaces and fewer cracks for gan layers by using an in-doped interlayer than by using an undoped interlayer. in doping has been found to enhance the lateral growth and reduce the growth rate of the c face. it can explain the strain relief and cracks reduction in gan films. (c) 2008 wiley-vch verlag gmbh & co. kgaa, weinheim.
学科主题半导体材料
收录类别SCI
语种英语
公开日期2010-03-08
源URL[http://ir.semi.ac.cn/handle/172111/6822]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
推荐引用方式
GB/T 7714
Wu, JJ,Zhao, LB,Zhang, GY,et al. Effect of indium-doped interlayer on the strain relief in GaN films grown on Si(111)[J]. physica status solidi a-applications and materials science,2008,205(2):294-299.
APA Wu, JJ.,Zhao, LB.,Zhang, GY.,Liu, XL.,Zhu, QS.,...&Hu, TD.(2008).Effect of indium-doped interlayer on the strain relief in GaN films grown on Si(111).physica status solidi a-applications and materials science,205(2),294-299.
MLA Wu, JJ,et al."Effect of indium-doped interlayer on the strain relief in GaN films grown on Si(111)".physica status solidi a-applications and materials science 205.2(2008):294-299.

入库方式: OAI收割

来源:半导体研究所

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