Narrow line-width resonant cavity enhanced photodetectors operating at 1.55 mu m
文献类型：期刊论文
| 作者 | Mao, RW ; Tsai, CS ; Yu, JZ ; Wang, QM |
| 刊名 | optics communications
 |
| 出版日期 | 2008 |
| 卷号 | 281期号:6页码:1582-1587 |
| 关键词 | resonant cavity enhanced (RCE) photodetector line-width free carrier absorption |
| ISSN号 | 0030-4018 |
| 通讯作者 | tsai, cs, univ calif irvine, dept elect engn & comp sci, irvine, ca 92697 usa. 电子邮箱地址: rwmao@uci.edu ; cstsai@uci.edu ; qmwang@red.semi.ac.cn |
| 中文摘要 | a method for fabrication of long-wavelength narrow line-width ingaas resonant cavity enhanced (rce) photodetectors in a silicon substrate operating at the wavelength range of 1.3-1.6 mu m has been developed. a full width at half maximum (fwhm) of 0.7 nm and a peak responsivity of 0. 16 a/w at the resonance wavelength of 1.55 mu m have been accomplished by using a thick inp layer as part of the resonant cavity. the effects of roughness and tilt of the inp layer surface, and its free carrier absorption, as well as the thickness deviation of the mirror pair on the resonance wavelength shift and the peak quantum efficiency of the rce photodetectors are analyzed in detail, and approaches for minimizing them toward superior performance are suggested. (c) 2007 elsevier b.v. all rights reserved. |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/6824]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Mao, RW,Tsai, CS,Yu, JZ,et al. Narrow line-width resonant cavity enhanced photodetectors operating at 1.55 mu m[J]. optics communications,2008,281(6):1582-1587. |
| APA | Mao, RW,Tsai, CS,Yu, JZ,&Wang, QM.(2008).Narrow line-width resonant cavity enhanced photodetectors operating at 1.55 mu m.optics communications,281(6),1582-1587. |
| MLA | Mao, RW,et al."Narrow line-width resonant cavity enhanced photodetectors operating at 1.55 mu m".optics communications 281.6(2008):1582-1587. |
入库方式： OAI收割
来源：半导体研究所
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