Electronic structure in GaAs/AlxGa1-xAs spherical quantum dots
文献类型：期刊论文
| 作者 | Wang, CD |
| 刊名 | acta physica sinica
 |
| 出版日期 | 2008 |
| 卷号 | 57期号:2页码:1091-1096 |
| 关键词 | spherical quantum dot analytical method plane wave method effective mass |
| ISSN号 | 1000-3290 |
| 通讯作者 | wang, cd, chinese acad sci, inst semicond, natl lab superlattices & microstruct, beijing 100083, peoples r china. 电子邮箱地址: sirwangdao@sina.com |
| 中文摘要 | in this paper, how the dots' radius, at concentration and external electric field affect the single electron energy states in gaas/alxga1-xas spherical quantum dots are discussed in detail. furthermore, the modification of the energy states is calculated when the difference in effective electron mass in gaas and alxga1-xas are considered. in addition, both the analytical method and the plane wave method are used in calculation and the results are compared, showing that they are in good agreement with each other. the results and methods can provide useful information for the future research and potential applications of quantum dots. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 中文 |
| 公开日期 | 2010-03-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/6838]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Wang, CD. Electronic structure in GaAs/AlxGa1-xAs spherical quantum dots[J]. acta physica sinica,2008,57(2):1091-1096. |
| APA | Wang, CD.(2008).Electronic structure in GaAs/AlxGa1-xAs spherical quantum dots.acta physica sinica,57(2),1091-1096. |
| MLA | Wang, CD."Electronic structure in GaAs/AlxGa1-xAs spherical quantum dots".acta physica sinica 57.2(2008):1091-1096. |
入库方式： OAI收割
来源：半导体研究所
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