Circular photogalvanic effect at inter-band excitation in InN
文献类型：期刊论文
| 作者 | Zhang, Z ; Zhang, R ; Liu, B ; Xie, ZL ; Xiu, XQ ; Han, R ; Lu, H ; Zheng, YD ; Chen, YH ; Tang, CG ; Wang, ZG |
| 刊名 | solid state communications
 |
| 出版日期 | 2008 |
| 卷号 | 145期号:4页码:159-162 |
| 关键词 | InN photogalvanic inter-band transition |
| ISSN号 | 0038-1098 |
| 通讯作者 | zhang, r, nanjing univ, key lab adv photon & elect mat, nanjing 210093, peoples r china. 电子邮箱地址: rzhang@nju.edu.cn |
| 中文摘要 | the circular photogalvanic effect (cpge) is observed in inn at inter-band excitation. the function of the cpge induced current on laser helicity is experimentally demonstrated and illustrated with the microscopic model. a spin-dependent current obtained in inn is one order larger than in the algan/gan heterostructures at inter-band excitation. the dependence of cpge current amplitude on light power and incident angle can be well evaluated with phenomenological theory. this sizeable spin-dependent current not only provides an opportunity to realize spin polarized current at room temperature, but also can be utilized as a reliable tool of spin splitting investigation in semiconductors. (c) 2007 published by elsevier ltd. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/6842]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhang, Z,Zhang, R,Liu, B,et al. Circular photogalvanic effect at inter-band excitation in InN[J]. solid state communications,2008,145(4):159-162. |
| APA | Zhang, Z.,Zhang, R.,Liu, B.,Xie, ZL.,Xiu, XQ.,...&Wang, ZG.(2008).Circular photogalvanic effect at inter-band excitation in InN.solid state communications,145(4),159-162. |
| MLA | Zhang, Z,et al."Circular photogalvanic effect at inter-band excitation in InN".solid state communications 145.4(2008):159-162. |
入库方式： OAI收割
来源：半导体研究所
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