A novel butt-joint scheme for the preparation of electro-absorptive lasers
文献类型：期刊论文
| 作者 | Pan JQ
|
| 刊名 | journal of physics d-applied physics
 |
| 出版日期 | 2008 |
| 卷号 | 41期号:3页码:art. no. 035108 |
| ISSN号 | 0022-3727 |
| 关键词 | INTEGRATED DFB LASER |
| 通讯作者 | cheng, yb, chinese acad sci, inst semicond, state key lab integrated optoelect, pob 912, beijing 100083, peoples r china. 电子邮箱地址: ybcheng@semi.ac.cn |
| 中文摘要 | a 1.55 mu m ingaasp/ingaasp multiple-quantum-well electro-absorption modulator (eam) monolithically integrated with a distributed feedback laser (dfb) diode has been realized based on a novel butt-joint scheme by ultra-low metal-organic vapour phase epitaxy for the first time. the threshold current of 25 ma and an extinction ratio of more than 30 db are obtained by using the novel structure. the beam divergence angles at the horizontal and vertical directions are as small as 19.3 degrees x 13 degrees, respectively, without a spot-size converter by undercutting the ingaasp active region. the capacitance of the ridge waveguide device with a deep mesa buried by polyimide was reduced down to 0.30 pf. |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/6854]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Pan JQ. A novel butt-joint scheme for the preparation of electro-absorptive lasers[J]. journal of physics d-applied physics,2008,41(3):art. no. 035108. |
| APA | Pan JQ.(2008).A novel butt-joint scheme for the preparation of electro-absorptive lasers.journal of physics d-applied physics,41(3),art. no. 035108. |
| MLA | Pan JQ."A novel butt-joint scheme for the preparation of electro-absorptive lasers".journal of physics d-applied physics 41.3(2008):art. no. 035108. |
入库方式： OAI收割
来源：半导体研究所
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