Effect on nitrogen acceptor as Mg is alloyed into ZnO
文献类型：期刊论文
| 作者 | Gai, YQ ; Yao, B ; Wei, ZP ; Li, YF ; Lu, YM ; Shen, DZ ; Zhang, JY ; Zhao, DX ; Fan, XW ; Li, JB ; Xia, JB |
| 刊名 | applied physics letters
 |
| 出版日期 | 2008 |
| 卷号 | 92期号:6页码:art. no. 062110 |
| 关键词 | P-TYPE ZNO II-VI BAND-GAP SEMICONDUCTORS FILMS MGXZN1-XO EPITAXY |
| ISSN号 | 0003-6951 |
| 通讯作者 | yao, b, chinese acad sci, inst semicond, state key lab superlattice & microstruct, pob 912, beijing 10083, peoples r china. 电子邮箱地址: yaobin196226@yahoo.com.cn ; jbli@semi.ac.cn |
| 中文摘要 | our raman measurement indicates that the intensity of the peaks (510 and 645 cm(-1)) related to nitrogen concentration is enhanced in mgzno compared with that in zno. using first-principles band structure methods, we calculated the formation energy and transition energy level for nitrogen acceptor in zno and random mgxzn1-xo (with x=0.25) alloy. our calculations show that the incorporation of nitrogen can be enhanced as mg is alloyed into zno, which agrees with our experiments. the acceptor energy level deeper in the alloy ascribes to the downward shift of the valence-band maximum edge in the presence of magnesium. (c) 2008 american institute of physics. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/6864]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Gai, YQ,Yao, B,Wei, ZP,et al. Effect on nitrogen acceptor as Mg is alloyed into ZnO[J]. applied physics letters,2008,92(6):art. no. 062110. |
| APA | Gai, YQ.,Yao, B.,Wei, ZP.,Li, YF.,Lu, YM.,...&Xia, JB.(2008).Effect on nitrogen acceptor as Mg is alloyed into ZnO.applied physics letters,92(6),art. no. 062110. |
| MLA | Gai, YQ,et al."Effect on nitrogen acceptor as Mg is alloyed into ZnO".applied physics letters 92.6(2008):art. no. 062110. |
入库方式： OAI收割
来源：半导体研究所
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