中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Optical response of high-level bandgap in one-dimensional photonic crystal applying in-plane integration

文献类型:期刊论文

作者Lu, XD ; Han, PD ; Quan, YJ ; Ran, QJ ; Gao, LP ; Zeng, FP ; Zhao, CH ; Yu, JZ
刊名optical engineering
出版日期2007
卷号46期号:12页码:art. no. 124602
关键词photonic crystal high-level bandgap lithography
ISSN号0091-3286
通讯作者lu, xd, chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china. 电子邮箱地址: lxd2211@sina.com.cn
中文摘要a new broadband filter, based on the high level bandgap in 1-d photonic crystals (pcs) of the form si vertical bar air vertical bar si vertical bar air vertical bar si vertical bar air vertical bar si vertical bar air vertical bar si vertical bar air vertical bar si is designed by the plane wave expansion method (pwem) and the transfer matrix method (tmm) and fabricated by lithography. the optical response of this filter to normal-incident and oblique-incident light proves that utilizing the high-level bandgaps of pcs is an efficient method to lower the difficulties of fabricating pcs, increase the etching depth of semiconductor materials, and reduce the coupling loss at the interface between optical fibers and the pc device. (c) 2007 society of photo-optical instrumentation engineers.
学科主题光电子学
收录类别SCI
语种英语
公开日期2010-03-08
源URL[http://ir.semi.ac.cn/handle/172111/6874]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
推荐引用方式
GB/T 7714
Lu, XD,Han, PD,Quan, YJ,et al. Optical response of high-level bandgap in one-dimensional photonic crystal applying in-plane integration[J]. optical engineering,2007,46(12):art. no. 124602.
APA Lu, XD.,Han, PD.,Quan, YJ.,Ran, QJ.,Gao, LP.,...&Yu, JZ.(2007).Optical response of high-level bandgap in one-dimensional photonic crystal applying in-plane integration.optical engineering,46(12),art. no. 124602.
MLA Lu, XD,et al."Optical response of high-level bandgap in one-dimensional photonic crystal applying in-plane integration".optical engineering 46.12(2007):art. no. 124602.

入库方式: OAI收割

来源:半导体研究所

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