Elasticity, band-gap bowing, and polarization of AlxGa1-xN alloys
文献类型：期刊论文
| 作者 | Duan, YF ; Li, JB ; Li, SS ; Xia, JB |
| 刊名 | journal of applied physics
 |
| 出版日期 | 2008 |
| 卷号 | 103期号:2页码:art. no. 023705 |
| 关键词 | STRAINED WURTZITE SEMICONDUCTORS FUNCTIONAL PERTURBATION-THEORY QUANTUM-WELLS 1ST-PRINCIPLES CALCULATIONS OPTICAL BOWINGS NITRIDE CONSTANTS OFFSETS FIELDS DIODES |
| ISSN号 | 0021-8979 |
| 通讯作者 | li, jb, chinese acad sci, inst semicond, state key lab superlattices & microstruct, beijing 100083, peoples r china. 电子邮箱地址: jbli@semi.ac.cn |
| 中文摘要 | elastic constants, the bulk modulus, young's modulus, band-gap bowing coefficients, spontaneous and piezoelectric polarizations, and piezoelectric coefficients of hexagonal alxga1-xn ternary alloys are calculated using first-principles methods. the fully relaxed structures and the structures subjected to homogeneous biaxial and uniaxial tension are investigated. we show that the biaxial tension in the plane perpendicular to the c axis and the uniaxial tension along the c axis all reduce the bulk modulus, whereas they reduce and enhance young's modulus, respectively. we find that the biaxial and uniaxial tension can enhance the bowing coefficients. we also find that the biaxial tension can enhance the total polarization, while the uniaxial tension will suppress the total polarization. (c) 2008 american institute of physics. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/6884]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Duan, YF,Li, JB,Li, SS,et al. Elasticity, band-gap bowing, and polarization of AlxGa1-xN alloys[J]. journal of applied physics,2008,103(2):art. no. 023705. |
| APA | Duan, YF,Li, JB,Li, SS,&Xia, JB.(2008).Elasticity, band-gap bowing, and polarization of AlxGa1-xN alloys.journal of applied physics,103(2),art. no. 023705. |
| MLA | Duan, YF,et al."Elasticity, band-gap bowing, and polarization of AlxGa1-xN alloys".journal of applied physics 103.2(2008):art. no. 023705. |
入库方式： OAI收割
来源：半导体研究所
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