Influence of different interlayers on growth mode and properties of InN by MOVPE
文献类型：期刊论文
| 作者 | Zhang, RQ ; Liu, XL ; Kang, TT ; Hu, WG ; Yang, SY ; Jiao, CM ; Zhu, QS |
| 刊名 | chinese physics letters
 |
| 出版日期 | 2008 |
| 卷号 | 25期号:1页码:238-241 |
| 关键词 | DEFECT STRUCTURE EPITAXIAL GAN BAND-GAP |
| ISSN号 | 0256-307x |
| 通讯作者 | zhang, rq, chinese acad sci, inst semicond, key lab mat sci, pob 912, beijing 100083, peoples r china. 电子邮箱地址: zhangriq@semi.ac.cn ; xlliu@semi.ac.cn |
| 中文摘要 | we grow inn epilayers on different interlayers by metal organic vapour phase epitaxy (movpe) method, and investigate the effect of interlayer on the properties and growth mode of inn films. three inn samples were deposited on nitrided sapphire, low-temperature inn (lt-inn) and high-temperature gan (ht-gan), respectively. the inn layer grown directly on nitrided sapphire owns the narrowest x-ray diffraction rocking curve (xrc) width of 300 arcsec among the three samples, and demonstrates a two-dimensional (2d) step-flow-like lateral growth mode, which is much different from the three-dimensional (3d) pillar-like growth mode of lt-inn and ht-gan buffered samples. it seems that mismatch tensile strain is helpful for the lateral epitaxy of inn film, whereas compressive strain promotes the vertical growth of inn films. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/6894]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhang, RQ,Liu, XL,Kang, TT,et al. Influence of different interlayers on growth mode and properties of InN by MOVPE[J]. chinese physics letters,2008,25(1):238-241. |
| APA | Zhang, RQ.,Liu, XL.,Kang, TT.,Hu, WG.,Yang, SY.,...&Zhu, QS.(2008).Influence of different interlayers on growth mode and properties of InN by MOVPE.chinese physics letters,25(1),238-241. |
| MLA | Zhang, RQ,et al."Influence of different interlayers on growth mode and properties of InN by MOVPE".chinese physics letters 25.1(2008):238-241. |
入库方式： OAI收割
来源：半导体研究所
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