Hydrogen sensors based on AlGaN/AIN/GaN Schottky diodes
文献类型：期刊论文
| 作者 | Wang, XH ; Wang, XL ; Feng, C ; Xiao, HL ; Yang, CB ; Wang, JX ; Wang, BZ ; Ran, JX ; Wang, CM |
| 刊名 | chinese physics letters
 |
| 出版日期 | 2008 |
| 卷号 | 25期号:1页码:266-269 |
| 关键词 | GAS SENSORS HEMT STRUCTURES MOBILITY TRANSISTORS TEMPERATURE SURFACES PT/GAN GROWTH PD/GAN MOCVD |
| ISSN号 | 0256-307x |
| 通讯作者 | wang, xh, chinese acad sci, inst semicond, beijing 100083, peoples r china. 电子邮箱地址: wxh@mail.semi.ac.cn |
| 中文摘要 | pt/algan/ain/gan schottky diodes are fabricated and characterized for hydrogen sensing. the pt schottky contact and the ti/al/ni/au ohmic contact are formed by evaporation. both the forward and reverse currents of the device increase greatly when exposed to hydrogen gas. a shift of 0.3 v at 300k is obtained at a fixed forward current after switching from n-2 to 10%h-2+n-2. the sensor responses under different concentrations from 50ppm h-2 to 10%h-2+n-2 at 373k are investigated. time dependences of the device forward current at 0.5 v forward bias in n-2 and air atmosphere at 300 and 373k are compared. oxygen in air accelerates the desorption of the hydrogen and the recovery of the sensor. finally, the decrease of the schottky barrier height and sensitivity of the sensor are calculated. |
| 学科主题 | 半导体器件 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/6898]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Wang, XH,Wang, XL,Feng, C,et al. Hydrogen sensors based on AlGaN/AIN/GaN Schottky diodes[J]. chinese physics letters,2008,25(1):266-269. |
| APA | Wang, XH.,Wang, XL.,Feng, C.,Xiao, HL.,Yang, CB.,...&Wang, CM.(2008).Hydrogen sensors based on AlGaN/AIN/GaN Schottky diodes.chinese physics letters,25(1),266-269. |
| MLA | Wang, XH,et al."Hydrogen sensors based on AlGaN/AIN/GaN Schottky diodes".chinese physics letters 25.1(2008):266-269. |
入库方式： OAI收割
来源：半导体研究所
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