Fabrication and transport properties of ZnO/Nb-1 wt %-doped SrTiO3 epitaxial heterojunctions
文献类型：期刊论文
| 作者 | Wu, YL ; Zhang, LW ; Xie, GL ; Zhu, JL ; Chen, YH |
| 刊名 | applied physics letters
 |
| 出版日期 | 2008 |
| 卷号 | 92期号:1页码:art. no. 012115 |
| 关键词 | MANGANITE-BASED HETEROJUNCTION SCHOTTKY CONTACTS TUNNELING CURRENT ZNO |
| ISSN号 | 0003-6951 |
| 通讯作者 | zhang, lw, tsing hua univ, dept phys, adv mat lab, beijing 100084, peoples r china. 电子邮箱地址: lwzhang@tsinghua.edu.cn |
| 中文摘要 | (110) zno/(001) nb-1 wt %-doped srtio3 n-n type heteroepitaxial junctions were fabricated using the pulse laser deposition method. a diodelike current behavior was observed. different from conventional p-n junctions or schottky diodes, the diffusion voltage was found to increase with temperature. at all temperatures, the forward current was perfectly fitted on the thermionic emission model. the band bending at the interface can qualitatively explain our results, and the extracted high ideality factor at low temperatures, as well as large saturation currents, is ascribed to the deep-level-assisted tunneling current through the junction. (c) 2008 american institute of physics. |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/6914]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Wu, YL,Zhang, LW,Xie, GL,et al. Fabrication and transport properties of ZnO/Nb-1 wt %-doped SrTiO3 epitaxial heterojunctions[J]. applied physics letters,2008,92(1):art. no. 012115. |
| APA | Wu, YL,Zhang, LW,Xie, GL,Zhu, JL,&Chen, YH.(2008).Fabrication and transport properties of ZnO/Nb-1 wt %-doped SrTiO3 epitaxial heterojunctions.applied physics letters,92(1),art. no. 012115. |
| MLA | Wu, YL,et al."Fabrication and transport properties of ZnO/Nb-1 wt %-doped SrTiO3 epitaxial heterojunctions".applied physics letters 92.1(2008):art. no. 012115. |
入库方式： OAI收割
来源：半导体研究所
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