中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Characterization of parasitics from scattering parameters of laser diode

文献类型:期刊论文

作者Zhang, SJ ; Zhu, NH ; Liu, Y ; Liu, YZ
刊名microwave and optical technology letters
出版日期2008
卷号50期号:1页码:1-4
关键词semiconductor lasers parasitic network parasitics scattering parameters
ISSN号0895-2477
通讯作者zhang, sj, univ elect sci & technol china, sch optoelect informat, chengdu 610054, peoples r china. 电子邮箱地址: sjzhang@uestc.edu.cn
中文摘要a novel method for characterizing the parasitics of parasitic network is proposed based on the relations between the scattering parameters of a semiconductor laser chip and laser diode. experiments are designed and performed using our method. the analysis results are in good agreement with the measurements. furthermore, how the parasitics change with the parasitic element values are investigated. the method only needs reflection coefficient of laser diode to be measured, which is simple because of the developed electrical-domain measurement techniques. 2007 wiley periodicals, inc.
学科主题光电子学
收录类别SCI
语种英语
公开日期2010-03-08
源URL[http://ir.semi.ac.cn/handle/172111/6932]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
推荐引用方式
GB/T 7714
Zhang, SJ,Zhu, NH,Liu, Y,et al. Characterization of parasitics from scattering parameters of laser diode[J]. microwave and optical technology letters,2008,50(1):1-4.
APA Zhang, SJ,Zhu, NH,Liu, Y,&Liu, YZ.(2008).Characterization of parasitics from scattering parameters of laser diode.microwave and optical technology letters,50(1),1-4.
MLA Zhang, SJ,et al."Characterization of parasitics from scattering parameters of laser diode".microwave and optical technology letters 50.1(2008):1-4.

入库方式: OAI收割

来源:半导体研究所

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