Using different carrier gases to control AlN film stress and the effect on morphology, structural properties and optical properties
文献类型：期刊论文
| 作者 | Hu, WG ; Liu, XL ; Jiao, CM ; Wei, HY ; Kang, TT ; Zhang, PF ; Zhang, RQ ; Fan, HB ; Zhu, QS |
| 刊名 | journal of physics d-applied physics
 |
| 出版日期 | 2007 |
| 卷号 | 40期号:23页码:7462-7466 |
| 关键词 | VAPOR-PHASE EPITAXY WURTZITE-TYPE CRYSTALS THIN-FILMS ALUMINUM NITRIDE INTRINSIC STRESS GAN SAPPHIRE AIN DEPOSITION STRAIN |
| ISSN号 | 0022-3727 |
| 通讯作者 | hu, wg, chinese acad sci, inst semicond, key lab semicond mat sci, po box 912, beijing 10083, peoples r china. 电子邮箱地址: sivamay@semi.ac.cn |
| 中文摘要 | on the metalorganic chemical vapour deposition growth of aln, by adjusting h-2+n-2 mixture gas components, we can gradually control island dimension. during the volmer - weber growth, the 2-dimensional coalescence of the islands induces an intrinsic tensile stress. then, this process can control the in-plane stress: with the n-2 content increasing from 0 to 3 slm, the in-plane stress gradually changes from 1.5 gpa tensile stress to - 1.2gpa compressive stress. especially, with the 0.5 slm n-2 + 2.5 slm h-2 mixture gas, the in-plane stress is only 0.1 gpa, which is close to the complete relaxation state. under this condition, this sample has good crystal and optical qualities. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/6936]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Hu, WG,Liu, XL,Jiao, CM,et al. Using different carrier gases to control AlN film stress and the effect on morphology, structural properties and optical properties[J]. journal of physics d-applied physics,2007,40(23):7462-7466. |
| APA | Hu, WG.,Liu, XL.,Jiao, CM.,Wei, HY.,Kang, TT.,...&Zhu, QS.(2007).Using different carrier gases to control AlN film stress and the effect on morphology, structural properties and optical properties.journal of physics d-applied physics,40(23),7462-7466. |
| MLA | Hu, WG,et al."Using different carrier gases to control AlN film stress and the effect on morphology, structural properties and optical properties".journal of physics d-applied physics 40.23(2007):7462-7466. |
入库方式： OAI收割
来源：半导体研究所
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