Photoluminescence study of AlGaInP/GaInP quantum well intermixing induced by zinc impurity diffusion
文献类型：期刊论文
| 作者 | Lin, T ; Zheng, K ; Wang, CL ; Ma, XY |
| 刊名 | journal of crystal growth
 |
| 出版日期 | 2007 |
| 卷号 | 309期号:2页码:140-144 |
| 关键词 | diffusion metalorganic vapor phase epitaxy semiconducting III-V materials laser diodes |
| ISSN号 | 0022-0248 |
| 通讯作者 | lin, t, xian univ technol, dept elect engn, xian 710048, peoples r china. 电子邮箱地址: lintao@semi.ac.cn |
| 中文摘要 | algainp/gainp quantum well intermixing phenomena induced by zn impurity diffusion at 540 degrees c were studied using room-temperature photo luminescence (pl) spectroscopy. as the diffusion time increased from 40 to 120 min, pl blue shift taken on the algainp/gainp quantum well regions increased from 36.3 to 171.6 mev. moreover, when the diffusion time was equal to or above 60 min, it was observed firstly that a pl red shift occurred with a pl blue shift on the samples. after detailed analysis, it was found that the red-shift pl spectra were measured on the ga0.51in0.49p buffer layer of the samples, and the mechanism of the pl red shift and the pl blue shift were studied qualitatively. (c) 2007 elsevier b.v. all rights reserved. |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/6938]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Lin, T,Zheng, K,Wang, CL,et al. Photoluminescence study of AlGaInP/GaInP quantum well intermixing induced by zinc impurity diffusion[J]. journal of crystal growth,2007,309(2):140-144. |
| APA | Lin, T,Zheng, K,Wang, CL,&Ma, XY.(2007).Photoluminescence study of AlGaInP/GaInP quantum well intermixing induced by zinc impurity diffusion.journal of crystal growth,309(2),140-144. |
| MLA | Lin, T,et al."Photoluminescence study of AlGaInP/GaInP quantum well intermixing induced by zinc impurity diffusion".journal of crystal growth 309.2(2007):140-144. |
入库方式： OAI收割
来源：半导体研究所
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