Does an enhanced yellow luminescence imply a reduction of electron mobility in n-type GaN?
文献类型：期刊论文
| 作者 | Zhao, DG ; Jiang, DS ; Zhu, JJ ; Liu, ZS ; Zhang, SM ; Liang, JW ; Yang, H |
| 刊名 | journal of applied physics
 |
| 出版日期 | 2007 |
| 卷号 | 102期号:11页码:art. no. 113521 |
| 关键词 | CHEMICAL-VAPOR-DEPOSITION MOLECULAR-BEAM EPITAXY X-RAY-DIFFRACTION MG-DOPED GAN UNDOPED GAN PHOTOLUMINESCENCE BANDS THREADING DISLOCATIONS POSITRON-ANNIHILATION GROWTH STOICHIOMETRY GALLIUM NITRIDE |
| ISSN号 | 0021-8979 |
| 通讯作者 | zhao, dg, chinese acad sci, inst semicond, state key lab integrated optelect, po box 912, beijing 100083, peoples r china. 电子邮箱地址: dgzhao@red.semi.ac.cn |
| 中文摘要 | it is studied whether there is any regular relationship between the yellow luminescence band and electron mobility of n-type gan. for a series of gan samples grown with the same si doping, it is found that the electron mobility decreases with an increase of relative intensity of yellow luminescence, accompanied by an increase of edge dislocation density. further research indicates that it is acceptors introduced by edge dislocations which lead to the concomitant changes of yellow luminescence and electron mobility. similar changes are induced by si doping in the n-type gan samples with relatively low edge dislocation density. however, the relationship between the yellow luminescence and electron mobility of n-type gan is not a simple one. a light si doping may simultaneously increase yellow luminescence and electron mobility when si doping plays a dominant role in reducing the carrier scattering. this means that even the intensity of yellow luminescence is often used as an indicator of material quality for gan, it does not have any monotonous correlation with the electron mobility of gan. (c) 2007 american institute of physics. |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/6940]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhao, DG,Jiang, DS,Zhu, JJ,et al. Does an enhanced yellow luminescence imply a reduction of electron mobility in n-type GaN?[J]. journal of applied physics,2007,102(11):art. no. 113521. |
| APA | Zhao, DG.,Jiang, DS.,Zhu, JJ.,Liu, ZS.,Zhang, SM.,...&Yang, H.(2007).Does an enhanced yellow luminescence imply a reduction of electron mobility in n-type GaN?.journal of applied physics,102(11),art. no. 113521. |
| MLA | Zhao, DG,et al."Does an enhanced yellow luminescence imply a reduction of electron mobility in n-type GaN?".journal of applied physics 102.11(2007):art. no. 113521. |
入库方式： OAI收割
来源：半导体研究所
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