1.58 mu m InGaAs quantum well laser on GaAs
文献类型:期刊论文
作者 | Tangring, I ; Ni, HQ ; Wu, BP ; Wu, DH ; Xiong, YH ; Huang, SS ; Niu, ZC ; Wang, SM ; Lai, ZH ; Larsson, A |
刊名 | applied physics letters
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出版日期 | 2007 |
卷号 | 91期号:22页码:art. no. 221101 |
关键词 | DOT LASERS GROWTH |
ISSN号 | 0003-6951 |
通讯作者 | tangring, i, chalmers, dept microtechnol & nanosci, s-41296 gothenburg, sweden. 电子邮箱地址: ivar.tangring@mc2.chalmers.se |
中文摘要 | we demonstrate the 1.58 mu m emission at room temperature from a metamorphic in0.6ga0.4as quantum well laser grown on gaas by molecular beam epitaxy. the large lattice mismatch was accommodated through growth of a linearly graded buffer layer to create a high quality virtual in0.32ga0.68as substrate. careful growth optimization ensured good optical and structural qualities. for a 1250x50 mu m(2) broad area laser, a minimum threshold current density of 490 a/cm(2) was achieved under pulsed operation. this result indicates that metamorphic ingaas quantum wells can be an alternative approach for 1.55 mu m gaas-based lasers. (c) 2007 american institute of physics. |
学科主题 | 半导体器件 |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2010-03-08 |
源URL | [http://ir.semi.ac.cn/handle/172111/6964] ![]() |
专题 | 半导体研究所_中国科学院半导体研究所(2009年前) |
推荐引用方式 GB/T 7714 | Tangring, I,Ni, HQ,Wu, BP,et al. 1.58 mu m InGaAs quantum well laser on GaAs[J]. applied physics letters,2007,91(22):art. no. 221101. |
APA | Tangring, I.,Ni, HQ.,Wu, BP.,Wu, DH.,Xiong, YH.,...&Larsson, A.(2007).1.58 mu m InGaAs quantum well laser on GaAs.applied physics letters,91(22),art. no. 221101. |
MLA | Tangring, I,et al."1.58 mu m InGaAs quantum well laser on GaAs".applied physics letters 91.22(2007):art. no. 221101. |
入库方式: OAI收割
来源:半导体研究所
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