中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
1.58 mu m InGaAs quantum well laser on GaAs

文献类型:期刊论文

作者Tangring, I ; Ni, HQ ; Wu, BP ; Wu, DH ; Xiong, YH ; Huang, SS ; Niu, ZC ; Wang, SM ; Lai, ZH ; Larsson, A
刊名applied physics letters
出版日期2007
卷号91期号:22页码:art. no. 221101
关键词DOT LASERS GROWTH
ISSN号0003-6951
通讯作者tangring, i, chalmers, dept microtechnol & nanosci, s-41296 gothenburg, sweden. 电子邮箱地址: ivar.tangring@mc2.chalmers.se
中文摘要we demonstrate the 1.58 mu m emission at room temperature from a metamorphic in0.6ga0.4as quantum well laser grown on gaas by molecular beam epitaxy. the large lattice mismatch was accommodated through growth of a linearly graded buffer layer to create a high quality virtual in0.32ga0.68as substrate. careful growth optimization ensured good optical and structural qualities. for a 1250x50 mu m(2) broad area laser, a minimum threshold current density of 490 a/cm(2) was achieved under pulsed operation. this result indicates that metamorphic ingaas quantum wells can be an alternative approach for 1.55 mu m gaas-based lasers. (c) 2007 american institute of physics.
学科主题半导体器件
收录类别SCI
语种英语
公开日期2010-03-08
源URL[http://ir.semi.ac.cn/handle/172111/6964]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
推荐引用方式
GB/T 7714
Tangring, I,Ni, HQ,Wu, BP,et al. 1.58 mu m InGaAs quantum well laser on GaAs[J]. applied physics letters,2007,91(22):art. no. 221101.
APA Tangring, I.,Ni, HQ.,Wu, BP.,Wu, DH.,Xiong, YH.,...&Larsson, A.(2007).1.58 mu m InGaAs quantum well laser on GaAs.applied physics letters,91(22),art. no. 221101.
MLA Tangring, I,et al."1.58 mu m InGaAs quantum well laser on GaAs".applied physics letters 91.22(2007):art. no. 221101.

入库方式: OAI收割

来源:半导体研究所

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