A new phototransistor with uni-travelling-carrier and optically gradual coupling properties
文献类型：期刊论文
| 作者 | Wang L ; Zhao L ; Pan J ; Zhang W ; Wang H ; Zhu H ; Wang W |
| 刊名 | opto-electronics review
 |
| 出版日期 | 2009 |
| 卷号 | 17期号:3页码:242-246 |
| 关键词 | phototransistor double heterojunction uni-travelling-carrier gradual coupling |
| ISSN号 | 1230-3402 |
| 通讯作者 | wang l chinese acad sci inst semicond pob 912 beijing 100083 peoples r china. e-mail address: lswang@semi.ac.cn |
| 中文摘要 | based on appropriate combination of different band-gap ingaasp, a new edge-coupled two-terminal double heterojunction phototransistor (ectt-dhpt) was designed and fabricated, which is double heterojunction, free-aluminium, and works under uni-travelling-carrier mode and optically gradual coupling mode. this device is fully compatible with monolithic micro-wave integrated circuits (mmic) and heterojunction bipolar transistor (hbt) in material and process. the dc characteristics reveal that the new ectt-dhpt can perform good optoelectronic mix operation and linear amplification operation by optically biased at two appropriate value respectively. responsivity of more than 52 a/w and dark current of 70 na (when v-ec = 1 v) were obtained. |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/6981]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Wang L,Zhao L,Pan J,et al. A new phototransistor with uni-travelling-carrier and optically gradual coupling properties[J]. opto-electronics review,2009,17(3):242-246. |
| APA | Wang L.,Zhao L.,Pan J.,Zhang W.,Wang H.,...&Wang W.(2009).A new phototransistor with uni-travelling-carrier and optically gradual coupling properties.opto-electronics review,17(3),242-246. |
| MLA | Wang L,et al."A new phototransistor with uni-travelling-carrier and optically gradual coupling properties".opto-electronics review 17.3(2009):242-246. |
入库方式： OAI收割
来源：半导体研究所
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