Growth of (10(1)over-bar(3)over-bar) semipolar GaN on m-plane sapphire by hydride vapor phase epitaxy
文献类型：期刊论文
| 作者 | Wei TB ; Wei XC; Duan RF
|
| 刊名 | journal of crystal growth
 |
| 出版日期 | 2009 |
| 卷号 | 311期号:17页码:4153-4157 |
| 关键词 | HRXRD PL Stacking fault HVPE GaN Semipolar |
| ISSN号 | 0022-0248 |
| 通讯作者 | wei tb chinese acad sci inst semicond semicond lighting technol res & dev ctr beijing 100083 peoples r china. e-mail address: tbwei@semi.ac.cn |
| 中文摘要 | the crystalline, surface, and optical properties of the (10 (1) over bar(3) over bar) semipolar gan directly grown on m-plane sapphire substrates by hydride vapor phase epitaxy (hvpe) were investigated. it was found that the increase of v/iii ratio led to high quality (10 (1) over bar(3) over bar) oriented gan epilayers with a morphology that may have been produced by step-flow growth and with minor evidence of anisotropic crystalline structure. after etching in the mixed acids, the inclined pyramids dominated the gan surface with a density of 2 x 10(5) cm(-2), revealing the n-polarity characteristic. in the low-temperature pl spectra, weak bsf-related emission at 3.44ev could be observed as a shoulder of donor-bound exciton lines for the epilayer at high v/iii ratio, which was indicative of obvious reduction of bsfs density. in comparison with other defect related emissions, a different quenching behavior was found for the 3.29 ev emission, characterized by the temperature-dependent pl measurement. (c) 2009 elsevier b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 资助信息 | national high technology program of china 2006aa03a143 national natural sciences foundation of china 60806001 chinese academy of sciences iscas2008t03 this work was supported by the national high technology program of china under grant no. 2006aa03a143 the national natural sciences foundation of china under grant no. 60806001 and the knowledge innovation program of the chinese academy of sciences under grant no. iscas2008t03. |
| 语种 | 英语 |
| 公开日期 | 2010-03-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/6985]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Wei TB,Wei XC,Duan RF. Growth of (10(1)over-bar(3)over-bar) semipolar GaN on m-plane sapphire by hydride vapor phase epitaxy[J]. journal of crystal growth,2009,311(17):4153-4157. |
| APA | Wei TB,Wei XC,&Duan RF.(2009).Growth of (10(1)over-bar(3)over-bar) semipolar GaN on m-plane sapphire by hydride vapor phase epitaxy.journal of crystal growth,311(17),4153-4157. |
| MLA | Wei TB,et al."Growth of (10(1)over-bar(3)over-bar) semipolar GaN on m-plane sapphire by hydride vapor phase epitaxy".journal of crystal growth 311.17(2009):4153-4157. |
入库方式： OAI收割
来源：半导体研究所
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