Proton irradiation-induced defects in undoped GaSb studied by positron lifetime spectroscopy and photoluminescence
文献类型：期刊论文
| 作者 | Li H ; Wang Z ; Zhou K ; Pang JB ; Ke JY ; Zhao YW |
| 刊名 | journal of optoelectronics and advanced materials
 |
| 出版日期 | 2009 |
| 卷号 | 11期号:8页码:1122-1126 |
| 关键词 | GaSb Proton irradiation Defects Positron lifetime Photoluminescence |
| ISSN号 | 1454-4164 |
| 通讯作者 | wang z wuhan univ dept phys wuhan 430072 peoples r china. e-mail address: wangz@whu.edu.cn |
| 中文摘要 | undoped gasb was irradiated by 2.6 mev protons. the irradiation-induced defects were studied by positron lifetime spectroscopy (pls) and photoluminescence (pl). positron lifetime measurements showed that vacancy-type defects were introduced after irradiation, and divacancies were formed at higher irradiation dose. annealing experiments revealed there were different annealing steps between the as grown and proton-irradiated samples, the reason for which was tentatively attributed to the formation of divacancies in the proton-irradiated samples during annealing. all the vacancy defects could be annealed out at around 500 degrees c. the pl intensity quickly fell down after proton irradiation and decreased with increasing irradiation dose, indicating that irradiation induced non-irradiative recombination centers, whose candidates were assigned to the vacancy defects induced by proton irradiation. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 资助信息 | natural science foundation of china 10775107 this work was supported by the natural science foundation of china under grant no. 10775107 |
| 语种 | 英语 |
| 公开日期 | 2010-03-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/6991]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Li H,Wang Z,Zhou K,et al. Proton irradiation-induced defects in undoped GaSb studied by positron lifetime spectroscopy and photoluminescence[J]. journal of optoelectronics and advanced materials,2009,11(8):1122-1126. |
| APA | Li H,Wang Z,Zhou K,Pang JB,Ke JY,&Zhao YW.(2009).Proton irradiation-induced defects in undoped GaSb studied by positron lifetime spectroscopy and photoluminescence.journal of optoelectronics and advanced materials,11(8),1122-1126. |
| MLA | Li H,et al."Proton irradiation-induced defects in undoped GaSb studied by positron lifetime spectroscopy and photoluminescence".journal of optoelectronics and advanced materials 11.8(2009):1122-1126. |
入库方式： OAI收割
来源：半导体研究所
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