High-speed 2 x 2 silicon-based electro-optic switch with nanosecond switch time
文献类型：期刊论文
| 作者 | Xu XJ ; Chen SW ; Xu HH ; Sun Y ; Yu YD ; Yu JZ ; Wang QM |
| 刊名 | chinese physics b
 |
| 出版日期 | 2009 |
| 卷号 | 18期号:9页码:3900-3904 |
| 关键词 | silicon-on-insulator electro-optic switch plasma dispersion effect switch time |
| ISSN号 | 1674-1056 |
| 通讯作者 | xu xj chinese acad sci inst semicond state key lab integrated optoelect beijing 100083 peoples r china. e-mail address: xjxu@semi.ac.cn |
| 中文摘要 | a 2 x 2 electro-optic switch is experimentally demonstrated using the optical structure of a mach-zehnder interferometer (mzi) based on a submicron rib waveguide and the electrical structure of a pin diode on silicon-on-insulator (soi). the switch behaviour is achieved through the plasma dispersion effect of silicon. the device has a modulation arm of i mm in length and cross-section of 400 nmx340 nm. the measurement results show that the switch has a v pi l pi figure of merit of 0.145 v-cm and the extinction ratios of two output ports and cross talk are 40 db, 28 db and -28 db, respectively. a 3 db modulation bandwidth of 90 mhz and a switch time of 6.8 ns for the rise edge and 2.7 ns for the fall edge are also demonstrated. |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 资助信息 | national natural science foundation of china 60577044 state key development program for basic research of china 2007cb613405 national high technology research and development program of china 2006aa032424 project supported by the national natural science foundation of china (grant no 60577044) the state key development program for basic research of china (grant no 2007cb613405) and the national high technology research and development program of china (grant no 2006aa032424). |
| 语种 | 英语 |
| 公开日期 | 2010-03-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/6999]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Xu XJ,Chen SW,Xu HH,et al. High-speed 2 x 2 silicon-based electro-optic switch with nanosecond switch time[J]. chinese physics b,2009,18(9):3900-3904. |
| APA | Xu XJ.,Chen SW.,Xu HH.,Sun Y.,Yu YD.,...&Wang QM.(2009).High-speed 2 x 2 silicon-based electro-optic switch with nanosecond switch time.chinese physics b,18(9),3900-3904. |
| MLA | Xu XJ,et al."High-speed 2 x 2 silicon-based electro-optic switch with nanosecond switch time".chinese physics b 18.9(2009):3900-3904. |
入库方式： OAI收割
来源：半导体研究所
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