Determination of the relative permittivity of the AlGaN barrier layer in strained AlGaN/GaN heterostructures
文献类型：期刊论文
| 作者 | Zhao JZ ; Lin ZJ ; Corrigan TD ; Zhang Y ; Lu YJ ; Lu W ; Wang ZG ; Chen H |
| 刊名 | chinese physics b
 |
| 出版日期 | 2009 |
| 卷号 | 18期号:9页码:3980-3984 |
| 关键词 | relative permittivity AlGaN barrier layer AlGaN/GaN heterostructures |
| ISSN号 | 1674-1056 |
| 通讯作者 | zhao jz shandong univ sch phys jinan 250100 peoples r china. e-mail address: linzj@sdu.edu.cn |
| 中文摘要 | using the measured capacitance-voltage curves and the photocurrent spectrum obtained from the ni schottky contact on a strained al0.3ga0.7n/gan heterostructure, the value of the relative permittivity of the algan barrier layer was analysed and calculated by self-consistently solving schrodinger's and poisson's equations. it is shown that the calculated values of the relative permittivity are different from those formerly reported, and reverse biasing the ni schottky contact has an influence on the value of the relative permittivity. as the reverse bias increases from 0 v to - 3 v, the value of the relative permittivity decreases from 7.184 to 7.093. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 资助信息 | national natural science foundation of china 10774090 national basic research program of china 2007cb936602 project supported by the national natural science foundation of china (grant no 10774090) and the national basic research program of china (grant no 2007cb936602). |
| 语种 | 英语 |
| 公开日期 | 2010-03-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/7001]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhao JZ,Lin ZJ,Corrigan TD,et al. Determination of the relative permittivity of the AlGaN barrier layer in strained AlGaN/GaN heterostructures[J]. chinese physics b,2009,18(9):3980-3984. |
| APA | Zhao JZ.,Lin ZJ.,Corrigan TD.,Zhang Y.,Lu YJ.,...&Chen H.(2009).Determination of the relative permittivity of the AlGaN barrier layer in strained AlGaN/GaN heterostructures.chinese physics b,18(9),3980-3984. |
| MLA | Zhao JZ,et al."Determination of the relative permittivity of the AlGaN barrier layer in strained AlGaN/GaN heterostructures".chinese physics b 18.9(2009):3980-3984. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。