Spin relaxation in submonolayer and monolayer InAs structures grown in a GaAs matrix
文献类型：期刊论文
| 作者 | Yang CL ; Cui XD ; Shen SQ ; Xu ZY ; Ge WK |
| 刊名 | physical review b
 |
| 出版日期 | 2009 |
| 卷号 | 80期号:3页码:art. no. 035313 |
| 关键词 | QUANTUM-WELLS SPINTRONICS ELECTRON |
| ISSN号 | 1098-0121 |
| 通讯作者 | yang cl univ hong kong dept phys hong kong hong kong peoples r china. e-mail address: xdcui@hku.hk |
| 中文摘要 | electron-spin dynamics in inas/gaas heterostructures consisting of a single layer of inas (1/3-1 monolayer) embedded in (001) and (311)a gaas matrix was studied by means of time-resolved kerr rotation spectroscopy. the spin-relaxation time of the submonolayer inas samples is significantly enhanced, compared with that of the monolayer inas sample. the electron-spin-relaxation time and the effective g factor in submonolayer samples were found to be strongly dependent on the photogenerated carrier density. the contribution from both the d'yakonov-perel' mechanism and bir-aronov-pikus mechanism are discussed to interpret the temperature dependence of spin decoherence at various carrier densities. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 资助信息 | hong kong grf hku701308p china nsf 60706021 1087424860876066the authors thank m. w. wu for helpful discussions. this work was supported by hong kong grf under grant no. hku701308p china nsf under grants no. 60706021 no. 10874248 and no. 60876066. |
| 语种 | 英语 |
| 公开日期 | 2010-03-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/7043]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Yang CL,Cui XD,Shen SQ,et al. Spin relaxation in submonolayer and monolayer InAs structures grown in a GaAs matrix[J]. physical review b,2009,80(3):art. no. 035313. |
| APA | Yang CL,Cui XD,Shen SQ,Xu ZY,&Ge WK.(2009).Spin relaxation in submonolayer and monolayer InAs structures grown in a GaAs matrix.physical review b,80(3),art. no. 035313. |
| MLA | Yang CL,et al."Spin relaxation in submonolayer and monolayer InAs structures grown in a GaAs matrix".physical review b 80.3(2009):art. no. 035313. |
入库方式： OAI收割
来源：半导体研究所
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