Nonpolar growth and characterization of InN overlayers on vertically oriented GaN nanorods
文献类型：期刊论文
| 作者 | Jiang DS ; Zhang SM; Yang H; Yang H; Wang YT; Zhu JJ; Wang H; Wang H; Zhu JH; Zhao DG
|
| 刊名 | journal of applied physics
 |
| 出版日期 | 2009 |
| 卷号 | 106期号:2页码:art. no. 026102 |
| 关键词 | LIGHT-EMITTING-DIODES FUNDAMENTAL-BAND GAP NANOWIRES HETEROSTRUCTURES NANOSTRUCTURES MOCVD POLAR |
| ISSN号 | 0021-8979 |
| 通讯作者 | sun x chinese acad sci inst semicond state key lab integrated optoelect pob 912 beijing 100083 peoples r china. e-mail address: xiansun@semi.ac.cn ; dsjiang@red.semi.ac.cn |
| 中文摘要 | nanostructured hexagonal inn overlayers were heteroepitaxially deposited on vertically oriented c-axis gan nanorods by metal-organic chemical vapor deposition. inn overlayers grown in radial directions are featured by a nonpolar heteroepitaxial growth mode on gan nanorods, showing a great difference from the conventional inn growth on (0001) c-plane gan template. the surface of inn overlayers is mainly composed of several specific facets with lower crystallographic indices. the orientation relationship between inn and gan lattices is found to be [0001](inn) parallel to [0001](gan) and [1100](inn)parallel to[1100](gan). a strong photoluminescence of inn nanostructures is observed. (c) 2009 american institute of physics. [doi 10.1063/1.3177347] |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 资助信息 | national natural science foundation of china 60506001 604760216057600360776047national basic research program 2007cb936700 we are grateful to qian sun for his critical reading and helpful discussions. this work is supported by the national natural science foundation of china (grant nos. 60506001 60476021 60576003 and 60776047) and national basic research program (contract no. 2007cb936700) |
| 语种 | 英语 |
| 公开日期 | 2010-03-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/7051]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Jiang DS,Zhang SM,Yang H,et al. Nonpolar growth and characterization of InN overlayers on vertically oriented GaN nanorods[J]. journal of applied physics,2009,106(2):art. no. 026102. |
| APA | Jiang DS.,Zhang SM.,Yang H.,Yang H.,Wang YT.,...&Zhao DG.(2009).Nonpolar growth and characterization of InN overlayers on vertically oriented GaN nanorods.journal of applied physics,106(2),art. no. 026102. |
| MLA | Jiang DS,et al."Nonpolar growth and characterization of InN overlayers on vertically oriented GaN nanorods".journal of applied physics 106.2(2009):art. no. 026102. |
入库方式： OAI收割
来源：半导体研究所
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