中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Electron spin quantum beats and room temperature g factor in GaAsN

文献类型:期刊论文

作者Zhao HM ; Lombez L ; Liu BL ; Sun BQ ; Xue QK ; Chen DM ; Marie X
刊名applied physics letters
出版日期2009
卷号95期号:4页码:art. no. 041911
关键词electron spin polarisation gallium arsenide g-factor high-speed optical techniques III-V semiconductors semiconductor thin films Zeeman effect
ISSN号0003-6951
通讯作者zhao hm chinese acad sci inst phys beijing natl lab condensed matter phys pob 603 beijing 100080 peoples r china. e-mail address: blliu@aphy.iphy.ac.cn ; marie@insa-toulouse.fr
中文摘要we report on the investigation of electron spin quantum beats at room temperature in gaasn thin films by time-resolved kerr rotation technique. the measurement of the quantum beats, which originate from the larmor precession of electron spins in external transverse magnetic field, yields an accurate determination of the conduction electron g factor. we show that the g factor of gaas1-xnx thin films is significantly changed by the introduction of a small nitrogen fraction.
学科主题半导体物理
收录类别SCI
资助信息chinese-french pra national science foundation of china pra mx06-07 1053403010774183national basic research program of china 2006cb921300973 we acknowledge the financial support of this work from the chinese-french pra. project no. pra mx06-07 from national science foundation of china (grant nos. 10534030 and 10774183) and from national basic research program of china (grant no. 2006cb921300973)
语种英语
公开日期2010-03-08
源URL[http://ir.semi.ac.cn/handle/172111/7061]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
推荐引用方式
GB/T 7714
Zhao HM,Lombez L,Liu BL,et al. Electron spin quantum beats and room temperature g factor in GaAsN[J]. applied physics letters,2009,95(4):art. no. 041911.
APA Zhao HM.,Lombez L.,Liu BL.,Sun BQ.,Xue QK.,...&Marie X.(2009).Electron spin quantum beats and room temperature g factor in GaAsN.applied physics letters,95(4),art. no. 041911.
MLA Zhao HM,et al."Electron spin quantum beats and room temperature g factor in GaAsN".applied physics letters 95.4(2009):art. no. 041911.

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来源:半导体研究所

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