Transport properties in a gated heterostructure with a trapezoidal AlxGa1-xAs barrier layer
文献类型：期刊论文
| 作者 | Liu J ; Zhu H
|
| 刊名 | physica e-low-dimensional systems & nanostructures
 |
| 出版日期 | 2009 |
| 卷号 | 41期号:8页码:1379-1381 |
| 关键词 | HEMT 2DEG |
| ISSN号 | 1386-9477 |
| 通讯作者 | zheng hz chinese acad sci inst semicond state key microstruct & superlattices pob 912 beijing 100083 peoples r china. e-mail address: hzzheng@semi.ac.cn |
| 中文摘要 | by replacing the flat (ga1-xalx)as barrier layer with a trapezoidal alxga1-xas barrier layer, a conventional heterostructure can be operated in enhancement mode. the sheet density of two-dimensional electron gas (2deg) in the structure can be tuned linearly from n-2d = 0.3 x 10(11) cm(-2) to n-2d = 4.3 x 10(11) cm(-2) by changing the bias on the top gate. the present scheme for gated heterostructures is easy to fabricate and does not require the use of self-alignment photolithography or the deposition of insulating layers. in addition, this scheme facilitates the initial electrical contact to 2deg. although, the highest electron mobility obtained for the moment is limited by the background doping level of heterostructures, the mobility should be improved substantially in the future. (c) 2009 elsevier b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 资助信息 | national basic research program of china 2006cb932801 2007cb924903 2007cb924904 special research programs of chinese academy of sciences the knowledge innovation program project of chinese academy of sciences kjcx.yw.w09 |
| 语种 | 英语 |
| 公开日期 | 2010-03-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/7065]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Liu J,Zhu H. Transport properties in a gated heterostructure with a trapezoidal AlxGa1-xAs barrier layer[J]. physica e-low-dimensional systems & nanostructures,2009,41(8):1379-1381. |
| APA | Liu J,&Zhu H.(2009).Transport properties in a gated heterostructure with a trapezoidal AlxGa1-xAs barrier layer.physica e-low-dimensional systems & nanostructures,41(8),1379-1381. |
| MLA | Liu J,et al."Transport properties in a gated heterostructure with a trapezoidal AlxGa1-xAs barrier layer".physica e-low-dimensional systems & nanostructures 41.8(2009):1379-1381. |
入库方式： OAI收割
来源：半导体研究所
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