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Lattice polarity detection of InN by circular photogalvanic effect
文献类型：期刊论文
| 作者 | Zhang Q ; Wang XQ ; He XW ; Yin CM ; Xu FJ ; Shen B ; Chen YH ; Wang ZG ; Ishitani Y ; Yoshikawa A |
| 刊名 | applied physics letters
 |
| 出版日期 | 2009 |
| 卷号 | 95期号:3页码:art. no. 031902 |
| 关键词 | III-V semiconductors indium compounds nondestructive testing photoconductivity radiation effects semiconductor thin films wide band gap semiconductors |
| ISSN号 | 0003-6951 |
| 通讯作者 | zhang q peking univ sch phys state key lab artificial microstruct & mesoscop p beijing 100871 peoples r china. e-mail address: wangshi@pku.edu.cn ; bshen@pku.edu.cn |
| 中文摘要 | we report an effective and nondestructive method based on circular photogalvanic effect (cpge) to detect the lattice polarity of inn. because of the lattice inversion between in- and n-polar inn, the energy band spin splitting is opposite for inn films with different polarities. consequently under light irradiation with the same helicity, cpge photocurrents in in- and n-polar layers will have opposite directions, thus the polarity can be detected. this method is demonstrated by our cpge measurements in both n- and p-type inn films. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 资助信息 | national natural science foundation of china 60806042 107740016073603360890193national basic research program of china 2006cb604908 2006cb921607 research fund for doctoral program of higher education in china 200800011021 20060001018nsfc 60625402 |
| 语种 | 英语 |
| 公开日期 | 2010-03-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/7067]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhang Q,Wang XQ,He XW,et al. Lattice polarity detection of InN by circular photogalvanic effect[J]. applied physics letters,2009,95(3):art. no. 031902. |
| APA | Zhang Q.,Wang XQ.,He XW.,Yin CM.,Xu FJ.,...&Yoshikawa A.(2009).Lattice polarity detection of InN by circular photogalvanic effect.applied physics letters,95(3),art. no. 031902. |
| MLA | Zhang Q,et al."Lattice polarity detection of InN by circular photogalvanic effect".applied physics letters 95.3(2009):art. no. 031902. |
入库方式： OAI收割
来源：半导体研究所
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