Mn-AlInN: a new diluted magnetic semiconductor
文献类型：期刊论文
| 作者 | Majid A ; Sharif R ; Zhu JJ ; Ali A |
| 刊名 | applied physics a-materials science & processing
 |
| 出版日期 | 2009 |
| 卷号 | 96期号:4页码:979-984 |
| ISSN号 | 0947-8396 |
| 关键词 | FILMS GROWTH GAN CR |
| 通讯作者 | majid a quaid i azam univ dept phys adv mat phys lab islamabad pakistan. e-mail address: abdulmajid40@yahoo.com ; akbar@qau.edu.pk |
| 中文摘要 | mn ions have been incorporated into mocvd grown al1-x in (x) n/gan thin films by ion implantation to achieve the room temperature ferromagnetism in the samples. magnetic characterizations revealed the presence of two ferromagnetic transitions one has curie points at similar to 260 k and the other above room temperature. in-diffusion of indium caused by the mn implantation leads to the partition of alinn epilayer into two diluted magnetic semiconductor sub-layers depending on the mn concentration. the curie temperature of 260 k is assigned to the layer having lower concentration, whereas t (c) above room temperature is assumed to be associated to the layer having higher mn concentration. |
| 学科主题 | 半导体材料 |
| 资助信息 | national natural science foundation of china 60506001 6047602160576003higher education commission (hec) of pakistan |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/7069]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Majid A,Sharif R,Zhu JJ,et al. Mn-AlInN: a new diluted magnetic semiconductor[J]. applied physics a-materials science & processing,2009,96(4):979-984. |
| APA | Majid A,Sharif R,Zhu JJ,&Ali A.(2009).Mn-AlInN: a new diluted magnetic semiconductor.applied physics a-materials science & processing,96(4),979-984. |
| MLA | Majid A,et al."Mn-AlInN: a new diluted magnetic semiconductor".applied physics a-materials science & processing 96.4(2009):979-984. |
入库方式： OAI收割
来源：半导体研究所
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