Deep levels in high resistivity GaN detected by thermally stimulated luminescence and first-principles calculations
文献类型：期刊论文
| 作者 | Li JB ; Hou QF
|
| 刊名 | journal of physics d-applied physics
 |
| 出版日期 | 2009 |
| 卷号 | 42期号:15页码:art. no. 155403 |
| 关键词 | N-TYPE GAN ELECTRON-MOBILITY TRANSISTORS VAPOR-PHASE EPITAXY DEFECTS THERMOLUMINESCENCE CARBON TRAP |
| ISSN号 | 0022-3727 |
| 通讯作者 | li jb chinese acad sci inst semicond state key lab superlattices & microstruct pob 912 beijing 100083 peoples r china. e-mail address: jbli@semi.ac.cn |
| 中文摘要 | thermally stimulated luminescence spectroscopy has been applied to study the deep centres in unintentionally doped high resistivity gan epilayers grown by the metal organic chemical vapour deposition method on c-sapphire substrates. two trap states with activation energies of 0.12 and 0.62 ev are evaluated from two luminescence peaks at 141.9 and 294.7 k in the luminescence curve. our spectroscopy measurement, in combination with more accurate first-principles studies, provided insights into the microscopic origin of these levels. our investigations suggest that the lower level at 0.12 ev might originate from c-n, which behaves as a hole trap state; the deeper level at 0.62 ev can be correlated with v-ga that corresponds to the yellow luminescence band observed in low-temperature photoluminescence spectra. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 资助信息 | chinese academy of sciences national natural science foundation of china national high technology research and development program of china 2006aa03a22 |
| 语种 | 英语 |
| 公开日期 | 2010-03-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/7075]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Li JB,Hou QF. Deep levels in high resistivity GaN detected by thermally stimulated luminescence and first-principles calculations[J]. journal of physics d-applied physics,2009,42(15):art. no. 155403. |
| APA | Li JB,&Hou QF.(2009).Deep levels in high resistivity GaN detected by thermally stimulated luminescence and first-principles calculations.journal of physics d-applied physics,42(15),art. no. 155403. |
| MLA | Li JB,et al."Deep levels in high resistivity GaN detected by thermally stimulated luminescence and first-principles calculations".journal of physics d-applied physics 42.15(2009):art. no. 155403. |
入库方式： OAI收割
来源：半导体研究所
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