Enhancement of conductivity and transmittance of ZnO films by post hydrogen plasma treatment
文献类型：期刊论文
| 作者 | Zhang XW ; You JB; Yin ZG
|
| 刊名 | journal of applied physics
 |
| 出版日期 | 2009 |
| 卷号 | 105期号:8页码:art. no. 083713 |
| ISSN号 | 0021-8979 |
| 关键词 | annealing carrier density carrier mobility diffusion electrical conductivity electrical resistivity hydrogen II-VI semiconductors impurity states interstitials light transmission plasma materials processing semiconductor thin films sputter deposition vacancies (crystal) visible spectra wide band gap semiconductors zinc compounds |
| 通讯作者 | zhang xw chinese acad sci inst semicond key lab semicond mat sci beijing 100083 peoples r china. e-mail address: xwzhang@semi.ac.cn |
| 中文摘要 | we studied the effects of hydrogen plasma treatment on the electrical and optical properties of zno films deposited by radio frequency magnetron sputtering. it is found that the zno h film is highly transparent with the average transmittance of 92% in the visible range. both carrier concentration and mobility are increased after hydrogen plasma treatment, correspondingly, the resistivity of the zno h films achieves the order of 10(-3) cm. we suggest that the incorporated hydrogen not only passivates most of the defects and/or acceptors present, but also introduces shallow donor states such as the v-o-h complex and the interstitial hydrogen h-i. moreover, the annealing data indicate that h-i is unstable in zno, while the v-o-h complex remains stable on the whole at 400 degrees c, and the latter diffuses out when the annealing temperature increases to 500 degrees c. these results make zno h more attractive for future applications as transparent conducting electrodes. |
| 学科主题 | 半导体物理 |
| 资助信息 | "863" project of china 2006aa03z306 national natural science foundation of china 50601025 60876031 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/7077]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhang XW,You JB,Yin ZG. Enhancement of conductivity and transmittance of ZnO films by post hydrogen plasma treatment[J]. journal of applied physics,2009,105(8):art. no. 083713. |
| APA | Zhang XW,You JB,&Yin ZG.(2009).Enhancement of conductivity and transmittance of ZnO films by post hydrogen plasma treatment.journal of applied physics,105(8),art. no. 083713. |
| MLA | Zhang XW,et al."Enhancement of conductivity and transmittance of ZnO films by post hydrogen plasma treatment".journal of applied physics 105.8(2009):art. no. 083713. |
入库方式： OAI收割
来源：半导体研究所
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