Electric Field Control of Interface Related Spin Splitting in Step Quantum Wells
文献类型：期刊论文
| 作者 | Hao GD
|
| 刊名 | chinese physics letters
 |
| 出版日期 | 2009 |
| 卷号 | 26期号:7页码:art. no. 077104 |
| 关键词 | CONDUCTION SUBBANDS INVERSION ASYMMETRY HETEROSTRUCTURES RASHBA LAYERS INAS |
| ISSN号 | 0256-307x |
| 通讯作者 | hao yf chinese acad sci inst semicond key lab semicond mat sci pob 912 beijing 100083 peoples r china. e-mail address: yhchen@red.semi.ac.cn |
| 中文摘要 | spin splitting of the alyga1-yas/gaas/alxga1-xas/alyga1-yas (x not equal y) step quantum wells (qws) has been theoretically investigated with a model that includes both the interface and the external electric field contribution. the overall spin splitting is mainly determined by the interface contribution, which can be well manipulated by the external electric field. in the absence of the electric field, the rashba effect exists due to the internal structure inversion asymmetry (sia). the electric field can strengthen or suppress the internal sia, resulting in an increase or decrease of the spin splitting. the step qw, which results in large spin splitting, has advantages in applications to spintronic devices compared with symmetrical and asymmetrical qws. due to the special structure design, the spin splitting does not change with the external electric field. |
| 学科主题 | 半导体化学 |
| 收录类别 | SCI |
| 资助信息 | national basic research program of china 2006cb921607 2006cb604908 national natural science foundation of china 60625402 |
| 语种 | 英语 |
| 公开日期 | 2010-03-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/7089]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Hao GD. Electric Field Control of Interface Related Spin Splitting in Step Quantum Wells[J]. chinese physics letters,2009,26(7):art. no. 077104. |
| APA | Hao GD.(2009).Electric Field Control of Interface Related Spin Splitting in Step Quantum Wells.chinese physics letters,26(7),art. no. 077104. |
| MLA | Hao GD."Electric Field Control of Interface Related Spin Splitting in Step Quantum Wells".chinese physics letters 26.7(2009):art. no. 077104. |
入库方式： OAI收割
来源：半导体研究所
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