SHORT PERIOD InAs/GaSb SUPERLATTICE INFRARED DETECTOR ON GaAs SUBSTRATES
文献类型：期刊论文
| 作者 | Xu YQ
|
| 刊名 | journal of infrared and millimeter waves
 |
| 出版日期 | 2009 |
| 卷号 | 28期号:3页码:165-+ |
| 关键词 | superlattice InAs/GaSb infrared detector molecular-beam epitaxy (MBE) spectral response |
| ISSN号 | 1001-9014 |
| 通讯作者 | guo j nw polytech univ sch mat xian 710072 peoples r china. |
| 中文摘要 | two type ii superlattices (sls) inas(2ml)/gasb(8ml) and inas(8ml)/gasb(8ml) were grown on gaas substrates by molecular-beam epitaxy. high resolution x-ray diffraction showed the periods of the two sls were 31.2 angstrom and 57.3 angstrom, respectively. room-temperature optical transmittance spectra showed that there were clear absorption edges at 2.1 mu m and 5 mu m for the two sls. the swir and mwir photoconductor devices were fabricated by standard lithography and etched by tartaric acid solution. the spectral response and blackbody tests were carried out at low and room temperatues. the results show that the 50% cutoff wavelengths of the two photoconductors are 2.1 mu m and 5.0 mu m respectively and d-bb* is above 2 x 10(8) cmhz(1/2)/w for two kinds of photoconductors at 77k. d-bb* is above 10(8) cmhz(1/2)/w for swir photoconductor at room temperature. |
| 学科主题 | 半导体器件 |
| 收录类别 | SCI |
| 语种 | 中文 |
| 公开日期 | 2010-03-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/7101]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Xu YQ. SHORT PERIOD InAs/GaSb SUPERLATTICE INFRARED DETECTOR ON GaAs SUBSTRATES[J]. journal of infrared and millimeter waves,2009,28(3):165-+. |
| APA | Xu YQ.(2009).SHORT PERIOD InAs/GaSb SUPERLATTICE INFRARED DETECTOR ON GaAs SUBSTRATES.journal of infrared and millimeter waves,28(3),165-+. |
| MLA | Xu YQ."SHORT PERIOD InAs/GaSb SUPERLATTICE INFRARED DETECTOR ON GaAs SUBSTRATES".journal of infrared and millimeter waves 28.3(2009):165-+. |
入库方式： OAI收割
来源：半导体研究所
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